公开(公告)号：US09646971B2

公开(公告)日：2017-05-09

申请号：US15162912

申请日：2016-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Im ,  Han-Jin Lim ,  Jin-Won Ma ,  Kong-Soo Lee ,  Ki-Vin Im

IPC: H01L27/108 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L29/06

CPC classification number: H01L27/10814 ,  B82Y10/00 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53271 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/90 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/775

Abstract: Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.