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公开(公告)号:US11575011B2
公开(公告)日:2023-02-07
申请号:US17515713
申请日:2021-11-01
Applicant: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
Inventor: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US11223929B2
公开(公告)日:2022-01-11
申请号:US16599967
申请日:2019-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinho Kim , Geunyoung Yu , Deoknam Kim , Jiwoong Park , Sangu Shim , Saehun Oh , Sukun Yoon
Abstract: Provided are an electronic device and method of determining a peer-to-peer (P2P) operating channel. The electronic device includes a communication interface; and a processor configured to acquire access point (AP) connection information of the electronic device about a wireless connection to an AP and BT connection information of the electronic device about a connection to a Bluetooth device, receive, from a peer device attempting to establish a P2P connection to the electronic device, AP connection information of the peer device about a wireless connection to an AP, determine a P2P operating channel between the electronic device and the peer device based on the AP connection information and the BT connection information of the electronic device and the AP connection information of the peer device, and establish a P2P connection between the electronic device and the peer device according to the determined P2P operating channel.
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公开(公告)号:US11189699B2
公开(公告)日:2021-11-30
申请号:US16428006
申请日:2019-05-31
Applicant: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
Inventor: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US12034049B2
公开(公告)日:2024-07-09
申请号:US18052017
申请日:2022-11-02
Applicant: Samsung Electronics Co., Ltd. , THE UNIVERSITY OF CHICAGO , Center for Technology Licensing at Cornell University
Inventor: Minhyun Lee , Jiwoong Park , Saien Xie , Jinseong Heo , Hyeonjin Shin
CPC classification number: H01L29/158 , H01L29/1054
Abstract: Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.
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公开(公告)号:US11871178B2
公开(公告)日:2024-01-09
申请号:US17649306
申请日:2022-01-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jiwoong Park , Hyeonjoong Kim , Sungeun Park
CPC classification number: H04R1/2811 , A61B5/02438 , G04G17/04 , G04G21/025 , G06F3/0412 , H04R1/028 , H04R1/04 , G06F1/181 , G06F2203/04102 , H04R2400/11 , H04R2499/11 , H04R2499/15
Abstract: An electronic device comprises a housing including a window member facing a first direction, a rear housing facing a second direction that is opposite to the first direction, and a side member encompassing the space between the window member and the rear housing. The electronic device also includes a display that is visible through at least a part of the window member and a speaker assembly disposed in the space. The speaker assemble includes a speaker diaphragm. The side member includes a resonance space including a shape a recessed form in a third direction that is substantially perpendicular to the first direction or the second direction. A through hole is formed in the third direction in a part of the resonance space that is closer to the rear housing than to the window member. A part of the resonance space can be disposed so as to overlap the speaker diaphragm.
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