公开(公告)号：US10090045B2

公开(公告)日：2018-10-02

申请号：US15917753

申请日：2018-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-ghee Hahn ,  Chang-yeon Yu ,  Joo-kwang Lee

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  G11C16/34

Abstract: Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups.

公开(公告)号：US09953703B2

公开(公告)日：2018-04-24

申请号：US15294995

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-ghee Hahn ,  Chang-yeon Yu ,  Joo-kwang Lee

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/34 ,  G11C16/08

CPC classification number: G11C11/5628 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/3459

Abstract: Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups.