公开(公告)号：US10008270B2

公开(公告)日：2018-06-26

申请号：US15383408

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/24 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

公开(公告)号：US09978458B2

公开(公告)日：2018-05-22

申请号：US15383132

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/34 ,  G11C16/28 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.

公开(公告)号：US10090045B2

公开(公告)日：2018-10-02

申请号：US15917753

申请日：2018-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-ghee Hahn ,  Chang-yeon Yu ,  Joo-kwang Lee

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  G11C16/34

Abstract: Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups.

公开(公告)号：US09953703B2

公开(公告)日：2018-04-24

申请号：US15294995

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-ghee Hahn ,  Chang-yeon Yu ,  Joo-kwang Lee

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/34 ,  G11C16/08

CPC classification number: G11C11/5628 ,  G11C11/5642 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/3459

Abstract: Provided is a programming method of a nonvolatile memory device including a plurality of memory cells. The programming method of the nonvolatile memory device includes: programming a first set of memory cells of the plurality of memory cells to a target state based on a primary program voltage such that a threshold voltage distribution of the first set of memory cells is formed; grouping the first set of memory cells into a plurality of cell groups at least one cell group having a different threshold voltage distribution width from others, based on program speeds of the first set of memory cells; and reprogramming remaining cell groups other than a first cell group that is programmed to the target state among the plurality of cell groups, to the target state based on a plurality of secondary program voltages determined based on threshold voltage distribution widths of the plurality of cell groups.