公开(公告)号：US09048236B2

公开(公告)日：2015-06-02

申请号：US13947411

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Jong-Mil Youn ,  Jong-Joon Park ,  Kwang-Yong Jang ,  Jun-Sun Hwang

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/518 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.

Abstract translation: 半导体器件包括形成在衬底上的层间绝缘膜，所述绝缘层包括沟槽。 在沟槽的底面上形成栅极绝缘层，在沟槽的底面上的栅极绝缘层上形成反应防止层。 在沟槽的反应防止层上形成替代金属栅极结构以填充沟槽。

公开(公告)号：US20140103441A1

公开(公告)日：2014-04-17

申请号：US13947411

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Jong-Mil Youn ,  Jong-Joon Park ,  Kwang-Yong Jang ,  Jun-Sun Hwang

IPC: H01L29/51 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/518 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.

Abstract translation: 半导体器件包括形成在衬底上的层间绝缘膜，所述绝缘层包括沟槽。 在沟槽的底面上形成栅极绝缘层，在沟槽的底面上的栅极绝缘层上形成反应防止层。 在沟槽的反应防止层上形成替代金属栅极结构以填充沟槽。