公开(公告)号：US09653572B2

公开(公告)日：2017-05-16

申请号：US14806304

申请日：2015-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Ah Nam ,  Sung-Hoon Kim ,  Il-Ryong Kim ,  Kwang-You Seo ,  Kwang-Yong Jang

IPC: H01L21/3213 ,  H01L29/66 ,  H01L21/321 ,  H01L29/51 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/32105 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method of fabricating a semiconductor device includes forming a dummy gate on a substrate, forming a dummy gate mask on the dummy gate, forming a gate spacer on the substrate, the gate spacer covering at least one sidewall surface of the dummy gate and the dummy gate mask, forming a recess on at least one side of the dummy gate by etching the substrate, and forming an epitaxial layer in the recess using an epitaxial growth process. The forming of the dummy gate mask includes forming an oxide layer and a dummy gate mask layer on the dummy gate.

公开(公告)号：US09048236B2

公开(公告)日：2015-06-02

申请号：US13947411

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Jong-Mil Youn ,  Jong-Joon Park ,  Kwang-Yong Jang ,  Jun-Sun Hwang

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/518 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.

Abstract translation: 半导体器件包括形成在衬底上的层间绝缘膜，所述绝缘层包括沟槽。 在沟槽的底面上形成栅极绝缘层，在沟槽的底面上的栅极绝缘层上形成反应防止层。 在沟槽的反应防止层上形成替代金属栅极结构以填充沟槽。

公开(公告)号：US20140103441A1

公开(公告)日：2014-04-17

申请号：US13947411

申请日：2013-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Jong-Mil Youn ,  Jong-Joon Park ,  Kwang-Yong Jang ,  Jun-Sun Hwang

IPC: H01L29/51 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/518 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench.

Abstract translation: 半导体器件包括形成在衬底上的层间绝缘膜，所述绝缘层包括沟槽。 在沟槽的底面上形成栅极绝缘层，在沟槽的底面上的栅极绝缘层上形成反应防止层。 在沟槽的反应防止层上形成替代金属栅极结构以填充沟槽。