公开(公告)号：US20190123262A1

公开(公告)日：2019-04-25

申请号：US15993862

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-myoung Lee ,  Jae-hoon Kim ,  Yong-sung Park ,  Se-chung Oh ,  Jun-ho Jeong

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: Provided is a semiconductor manufacturing apparatus including a transfer chamber, a first process chamber connected to the transfer chamber, and a second process chamber connected to the transfer chamber. The transfer chamber may be configured to transfer a substrate. The first process chamber may be configured to perform a first oxidation process for oxidizing a metal layer on the substrate at a first temperature. The second process chamber may be configured to perform a second oxidation process for oxidizing a metal layer on the substrate at a second temperature higher than the first temperature.