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公开(公告)号：US20240038843A1
公开(公告)日：2024-02-01
申请号：US18378710
申请日：2023-10-11
发明人： Soojin JEONG , Sunwook KIM , Junbeom PARK , Seungmin SONG
IPC分类号： H01L29/08 , H01L27/088 , H01L29/16 , H01L29/78
CPC分类号： H01L29/0847 , H01L27/0886 , H01L29/1608 , H01L29/7854
摘要： A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
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公开(公告)号：US20230178606A1
公开(公告)日：2023-06-08
申请号：US18096663
申请日：2023-01-13
发明人： Soojin JEONG , Sunwook KIM , Junbeom PARK , Seungmin SONG
IPC分类号： H01L29/08 , H01L27/088 , H01L29/16 , H01L29/78
CPC分类号： H01L29/0847 , H01L27/0886 , H01L29/1608 , H01L29/7854
摘要： A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
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公开(公告)号：US20210305371A1
公开(公告)日：2021-09-30
申请号：US17345241
申请日：2021-06-11
发明人： Soojin JEONG , Sunwook KIM , Junbeom PARK , Seungmin SONG
IPC分类号： H01L29/08 , H01L27/088 , H01L29/16 , H01L29/78
摘要： A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.
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公开(公告)号：US20220199775A1
公开(公告)日：2022-06-23
申请号：US17396942
申请日：2021-08-09
发明人： Junbeom PARK , Sangmo KOO , Minyi KIM , Seokhyeon YOON
摘要： The semiconductor device may include an active pattern provided on a substrate and a source/drain pattern on the active pattern. The source/drain pattern may include a bottom surface in contact with a top surface of the active pattern. The semiconductor device may further include a channel pattern connected to the source/drain pattern, a gate electrode extended to cross the channel pattern, and a fence insulating layer extended from a side surface of the active pattern to a lower side surface of the source/drain pattern. A pair of middle insulating patterns may be at both sides of the bottom surface of the source/drain pattern and between the active pattern and the source/drain pattern in contact with an inner side surface of the fence insulating layer.
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公开(公告)号：US20220037494A1
公开(公告)日：2022-02-03
申请号：US17189615
申请日：2021-03-02
发明人： Junbeom PARK , Sangsu KIM , Junggil YANG
IPC分类号： H01L29/423 , H01L29/417
摘要： A semiconductor device includes a first source/drain structure having a first length in a horizontal direction, as viewed in a planar cross-sectional view, the horizontal direction being perpendicular to a vertical direction, a second source/drain structure having a second length in the horizontal direction, as viewed in the planar cross-sectional view, the second length being less than the first length, channels extending between the first source/drain structure and the second source/drain structure, the channels being spaced apart from each other in the vertical direction, at least one sacrificial pattern between adjacent ones of the channels, and a trench penetrating the channels and the at least one sacrificial pattern.
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公开(公告)号：US20240006522A1
公开(公告)日：2024-01-04
申请号：US18204449
申请日：2023-06-01
发明人： Junbeom PARK , Sangwon BAEK , Yunsuk NAM
IPC分类号： H01L29/775 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/66
CPC分类号： H01L29/775 , H01L29/0673 , H01L29/42392 , H01L29/41733 , H01L29/66545 , H01L29/66553 , H01L29/66439
摘要： A semiconductor device includes an active region extending in a first direction on a substrate; a plurality of channel layers on the active region and spaced apart from each other in a vertical direction that is perpendicular to the first direction; a gate structure on the substrate, the gate structure intersecting the active region and the plurality of channel layers, extending in a second direction crossing the first direction, and respectively surrounding the plurality of channel layers; inner spacer layers on both sides of the gate structure in the first direction, and on respective lower surfaces of the plurality of channel layers; a protective layer in contact with the inner spacer layers, the plurality of channel layers, and the active region; and a source/drain region on the active region, on at least one side of the gate structure, and in contact with the inner spacer layers.
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公开(公告)号：US20220238723A1
公开(公告)日：2022-07-28
申请号：US17398504
申请日：2021-08-10
发明人： Soojin JEONG , Myunggil KANG , Junggil YANG , Junbeom PARK
IPC分类号： H01L29/786 , H01L29/06 , H01L29/423 , H01L21/02 , H01L29/66
摘要： A semiconductor device includes a first source/drain, a second source/drain isolated from direct contact with the first source/drain in a horizontal direction, a channel extending between the first source/drain and the second source/drain, a gate surrounding the channel, an upper inner spacer between the gate and the first source/drain and above the channel, and a lower inner spacer between the gate and the first source/drain and under the channel, in which the channel includes a base portion extending between the first source/drain and the second source/drain, an upper protrusion portion protruding upward from a top surface of the base portion, and a lower protrusion portion protruding downward from a bottom surface of the base portion, and a direction in which a top end of the upper protrusion portion is isolated from direct contact with a bottom end of the lower protrusion portion is oblique with respect to a vertical direction.
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公开(公告)号：US20220140081A1
公开(公告)日：2022-05-05
申请号：US17577595
申请日：2022-01-18
发明人： Sangsu KIM , Junbeom PARK , Junggil YANG
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66 , H01L29/06 , H01L29/423
摘要： A semiconductor device including an active pattern on a substrate and extending lengthwise in a first direction parallel to an upper surface of the substrate; a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction; channels spaced apart from each other along a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure along the first direction; a source/drain layer on a portion of the active pattern adjacent to the gate structure in the first direction, the source/drain layer contacting the channels; inner spacers between the gate structure and the source/drain layer, the inner spacers contacting the source/drain layer; and channel connection portions between each of the inner spacers and the gate structure, the channel connection portions connecting the channels with each other.
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