公开(公告)号：US20230223405A1

公开(公告)日：2023-07-13

申请号：US18122253

申请日：2023-03-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Minhee CHOI ,  Keunhwi CHO ,  Myunggil KANG ,  Seokhoon KIM ,  Dongwon KIM ,  Pankwi PARK ,  Dongsuk SHIN

IPC分类号： H01L29/08 ,  H01L29/06 ,  H01L29/161 ,  H01L29/167 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/0847 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/167 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66439

摘要： An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure along a second horizontal direction crossing the first horizontal direction, the gate structure being on the fin-type active area and on the device isolation layer, and a source/drain area on the fin-type active area, the source/drain area being adjacent to the gate structure, and including an outer blocking layer, an inner blocking layer, and a main body layer sequentially stacked on the fin-type active area, and each of the outer blocking layer and the main body layer including a Si1-xGex layer, where x≠0, and the inner blocking layer including a Si layer.

公开(公告)号：US20210175230A1

公开(公告)日：2021-06-10

申请号：US16911795

申请日：2020-06-25

申请人： Samsung Electronics Co., Ltd.

发明人： Woocheol SHIN ,  Myunggil KANG

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

摘要： A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.

公开(公告)号：US20240153954A1

公开(公告)日：2024-05-09

申请号：US18414039

申请日：2024-01-16

申请人： Samsung Electronics Co., Ltd.

发明人： Minhee CHOI ,  Keunhwi CHO ,  Myunggil KANG ,  Seokhoon KIM ,  Dongwon KIM ,  Pankwi PARK ,  Dongsuk SHIN

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/167 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/167 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7851

摘要： An integrated circuit device includes a fin-type active area along a first horizontal direction on a substrate, a device isolation layer on opposite sidewalls of the fin-type active area, a gate structure along a second horizontal direction crossing the first horizontal direction, the gate structure being on the fin-type active area and on the device isolation layer, and a source/drain area on the fin-type active area, the source/drain area being adjacent to the gate structure, and including an outer blocking layer, an inner blocking layer, and a main body layer sequentially stacked on the fin-type active area, and each of the outer blocking layer and the main body layer including a Si1-xGex layer, where x≠0, and the inner blocking layer including a Si layer.

公开(公告)号：US20220122965A1

公开(公告)日：2022-04-21

申请号：US17564593

申请日：2021-12-29

申请人： Samsung Electronics Co., Ltd.

发明人： Woocheol SHIN ,  Myunggil KANG

IPC分类号： H01L27/06 ,  H01L21/02 ,  H01L49/02 ,  H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417

摘要： A resistor includes a substrate including an active region protruding from an upper surface of the substrate and extending in a first horizontal direction, a doped region extending in the first horizontal direction on the active region and comprising a semiconductor layer with n-type impurities, a plurality of channel layers spaced apart from each other in a vertical direction on the active region and connected to the doped region, a first gate electrode and a second gate electrode extending in the second horizontal direction intersecting the first horizontal direction and surrounding the plurality of channel layers, a first contact plug and a second contact plug in contact with an upper surface of the doped region. The first contact plug is adjacent to the first gate electrode. The second contact plug is adjacent to the second gate electrode.

公开(公告)号：US20240321884A1

公开(公告)日：2024-09-26

申请号：US18442590

申请日：2024-02-15

申请人： Samsung Electronics Co., Ltd.

发明人： Inhyun SONG ,  Junggil YANG ,  Sangmoon LEE ,  Myunggil KANG ,  Jongsu KIM ,  Beomjin PARK

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： Provided is a semiconductor device including a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region and including a plurality of active patterns extending in a first horizontal direction and a semiconductor material layer, a gate line extending in a second horizontal direction that is perpendicular to the first horizontal direction and covering the channel region on the fin-type active region, and a pair of source/drain regions at both sides of the gate line on the fin-type active region, wherein a work function of the semiconductor material layer is different from a work function of the plurality of active patterns, the semiconductor material layer surrounds portions of the gate line between the plurality of active patterns, and the gate line is separated from the pair of source/drain regions with the semiconductor material layer therebetween.

公开(公告)号：US20240113182A1

公开(公告)日：2024-04-04

申请号：US18538575

申请日：2023-12-13

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yonghee PARK ,  Myunggil KANG ,  Uihui KWON ,  Seungkyu KIM ,  Ahyoung KIM ,  Ahyoung KIM ,  Youngseok SONG

IPC分类号： H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/41775 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

摘要： An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US20220165857A1

公开(公告)日：2022-05-26

申请号：US17352973

申请日：2021-06-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yonghee PARK ,  Myunggil KANG ,  Uihui KWON ,  Seungkyu KIM ,  Ahyoung KIM ,  Youngseok SONG

IPC分类号： H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

摘要： An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US20240096995A1

公开(公告)日：2024-03-21

申请号：US18231841

申请日：2023-08-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Beomjin PARK ,  Myunggil KANG ,  Dongwon KIM ,  Younggwon KIM ,  Hyumin YOO ,  Soojin JEONG

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device, may include an active region extending in a first direction; a plurality of channel layers on the active region to be spaced apart from each other; a gate structure, surrounding the plurality of channel layers, respectively; and source/drain regions on the active region on at least one side of the gate structure, and contacting the plurality of channel layers, wherein the gate structure may include an upper portion on an uppermost channel layer among the plurality of channel layers and lower portions between each of the plurality of channel layers in a region vertically overlapping the plurality of channel layers, wherein a width of each of the plurality of channel layers in the first direction may be less than a width of lower portions of the gate structure, adjacent to the respective channel layers among the lower portions of the gate structure in the first direction.

公开(公告)号：US20240096955A1

公开(公告)日：2024-03-21

申请号：US18367852

申请日：2023-09-13

申请人： Samsung Electronics Co., Ltd.

发明人： Myunggil KANG ,  Beomjin Park ,  Dongwon Kim

IPC分类号： H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0673 ,  H01L27/092 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

摘要： In some embodiments, an integrated circuit device includes a substrate, a fin-type active region on the substrate that extends in a first direction, a plurality of semiconductor patterns spaced apart from an upper surface of the fin-type active region and include a channel region, a gate electrode, and a gate cut insulating pattern. The gate electrode extends in a second direction on the fin-type active region and is disposed between the plurality of semiconductor patterns. The gate electrode includes a first sidewall extending in the second direction and a second sidewall extending in the first direction. The gate cut insulating pattern is on a second sidewall of the gate electrode. An upper portion of the gate cut insulating pattern is wider in the second direction than a lower portion of the gate cut insulating pattern. A portion of a sidewall of the gate cut insulating pattern is curved.

公开(公告)号：US20220238723A1

公开(公告)日：2022-07-28

申请号：US17398504

申请日：2021-08-10

申请人： Samsung Electronics Co., Ltd.

发明人： Soojin JEONG ,  Myunggil KANG ,  Junggil YANG ,  Junbeom PARK

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

摘要： A semiconductor device includes a first source/drain, a second source/drain isolated from direct contact with the first source/drain in a horizontal direction, a channel extending between the first source/drain and the second source/drain, a gate surrounding the channel, an upper inner spacer between the gate and the first source/drain and above the channel, and a lower inner spacer between the gate and the first source/drain and under the channel, in which the channel includes a base portion extending between the first source/drain and the second source/drain, an upper protrusion portion protruding upward from a top surface of the base portion, and a lower protrusion portion protruding downward from a bottom surface of the base portion, and a direction in which a top end of the upper protrusion portion is isolated from direct contact with a bottom end of the lower protrusion portion is oblique with respect to a vertical direction.