公开(公告)号：US09460800B2

公开(公告)日：2016-10-04

申请号：US15095183

申请日：2016-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Change-Hee Lee ,  Jang-Hwan Kim ,  Jung-Been Im ,  Dong-Hyun Song

IPC: G11C16/04 ,  G11C16/16

CPC classification number: G11C16/16 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/349

Abstract: A memory system including non-volatile memory devices and a corresponding refresh method are disclosed. The method groups memory blocks of the non-volatile memory devices into memory groups, determines a refresh sequence for the memory groups, and refreshes the memory groups in accordance with the refresh sequence.

Abstract translation: 公开了包括非易失性存储器件和对应刷新方法的存储器系统。 该方法将非易失性存储器件的存储块分组成存储器组，确定存储器组的刷新序列，并根据刷新序列刷新存储器组。

公开(公告)号：US20140160858A1

公开(公告)日：2014-06-12

申请号：US14176303

申请日：2014-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Change-Hee Lee ,  Jang-Hwan Kim ,  Jung-Been Im ,  Dong-Hyun Song

IPC: G11C16/16 ,  G11C16/04

CPC classification number: G11C16/16 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/349

Abstract: A memory system including non-volatile memory devices and a corresponding refresh method are disclosed. The method groups memory blocks of the non-volatile memory devices into memory groups, determines a refresh sequence for the memory groups, and refreshes the memory groups in accordance with the refresh sequence.

Abstract translation: 公开了包括非易失性存储器件和对应刷新方法的存储器系统。 该方法将非易失性存储器件的存储块分组成存储器组，确定存储器组的刷新序列，并根据刷新序列刷新存储器组。

公开(公告)号：US09336889B2

公开(公告)日：2016-05-10

申请号：US14176303

申请日：2014-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Change-Hee Lee ,  Jang-Hwan Kim ,  Jung-Been Im ,  Dong-Hyun Song

IPC: G11C16/04 ,  G11C16/16 ,  G11C16/34

CPC classification number: G11C16/16 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/349

Abstract: A memory system including non-volatile memory devices and a corresponding refresh method are disclosed. The method groups memory blocks of the non-volatile memory devices into memory groups, determines a refresh sequence for the memory groups, and refreshes the memory groups in accordance with the refresh sequence.

公开(公告)号：US09128618B2

公开(公告)日：2015-09-08

申请号：US14569143

申请日：2014-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Change-hee Lee ,  Jung-Been Im ,  Jung-Yeon Yoon ,  Young-Goo Ko ,  Dong-Hyun Song

IPC: G06F12/02 ,  G06F3/06 ,  G06F13/24 ,  G11C16/10

CPC classification number: G06F3/061 ,  G06F3/065 ,  G06F3/0688 ,  G06F12/0246 ,  G06F13/24 ,  G06F2212/7207 ,  G11C16/102 ,  G11C2216/20

Abstract: A non-volatile memory controller, system and method capable of processing a next request as an interrupt before completing a current operation are disclosed. The non-volatile memory system includes a first memory storing meta data loaded from a flash memory; a second memory storing the meta data copied from the first memory; and a flash memory controller copying the meta data from the first memory to the second memory, changing the meta data in the second memory, and then re-copying the changed meta data from the second memory to the first memory during a first-type operation that requires changes in the meta data.

Abstract translation: 公开了一种在完成当前操作之前能够处理下一个请求作为中断的非易失性存储器控制器，系统和方法。 非易失性存储器系统包括存储从快闪存储器加载的元数据的第一存储器; 存储从第一存储器复制的元数据的第二存储器; 以及闪存控制器，将所述元数据从所述第一存储器复制到所述第二存储器，改变所述第二存储器中的所述元数据，然后在第一类型操作期间将所述改变的元数据从所述第二存储器重新复制到所述第一存储器 这要求更改元数据。