公开(公告)号：US20240279802A1

公开(公告)日：2024-08-22

申请号：US18508704

申请日：2023-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min LEE ,  Gi Duck KWEON ,  Dae Ki KIM ,  Hang Kyu SONG ,  Hyun Tae YANG ,  Byoung Kwon YEO ,  Byeong Ho WOO ,  Jae Sung YU ,  Jung Bae CHOI

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/4557

Abstract: Provided are a process chamber cleaning apparatus and method in which the inside of a process chamber may be cleaned without damaging to an inner wall or a component of the process chamber. The process chamber cleaning apparatus comprising: a chamber housing; a substrate support installed inside the chamber housing, supporting a plurality of semiconductor substrates; a gas supply providing process gases; a first gas injector installed inside the chamber housing, connected to the gas supply, injecting etch gas, which is one of the process gases, into the chamber housing; and a controller controlling operations of the gas supply and the first gas injector, wherein the first gas injector injects the etch gas in a direction twisted at a predetermined angle from a central direction of the chamber housing.

公开(公告)号：US20190148632A1

公开(公告)日：2019-05-16

申请号：US16122056

申请日：2018-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min LEE ,  Ju-Hyun KIM ,  Jung-Hwan PARK ,  Se-Chung OH ,  Dong-Kyu LEE ,  Kyung-Il HONG

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10−8 Torr.

公开(公告)号：US20200313460A1

公开(公告)日：2020-10-01

申请号：US16754412

申请日：2018-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Hyang LEE ,  Yusu KIM ,  Kyungmin PARK ,  Wooram LEE ,  Jung-Min LEE

IPC: H02J50/10 ,  H02J50/80 ,  H02J7/02 ,  G01K1/02

Abstract: An electronic device according to various embodiments of the present invention comprises a wireless power reception circuit and a processor, wherein the processor can be set so as to receive power transmitted from an external electronic device by using the wireless power reception circuit, detect a state related with the reception during the reception of the power, and disable at least a part of the wireless power reception circuit such that the external electronic device stops the transmission when the state satisfies a designated condition. Other examples are also possible.

公开(公告)号：US20180034305A1

公开(公告)日：2018-02-01

申请号：US15633947

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min LEE ,  Young-Mi HA ,  Hong-Min SON ,  Sung-Joon CHO

IPC: H02J7/02 ,  H02J7/04 ,  H02J50/60

CPC classification number: H02J7/025 ,  H02J7/0029 ,  H02J7/045 ,  H02J7/047 ,  H02J50/10 ,  H02J50/60 ,  H02J2007/0039 ,  H02J2007/0096

Abstract: A reception device for receiving wireless power may include: a power reception circuit configured to wirelessly receive power from a transmission device, rectify the received power, and output the rectified power; a charger configured to process the rectified power received from the power reception circuit and charge a battery of the reception device or output the rectified power to a system of the reception device; and a control circuit configured to, when an event for changing an input current limit of the charger is detected, gradually change the input current limit of the charger by stepping up or stepping down the input current limit to one or more intermediary values until the input current limit reaches a predetermined value.