公开(公告)号：US20180211715A1

公开(公告)日：2018-07-26

申请号：US15810741

申请日：2017-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-sung CHO ,  Il-han PARK ,  Jung-yun YUN ,  Youn-ho HONG

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/3481 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/30 ,  G11C16/3459 ,  G11C2211/5621

Abstract: Provided is a programming method of a nonvolatile memory device, the method comprising the steps of a first programming loop including applying a first verifying voltage to word lines of a plurality of first memory cells for being programmed in a first programming state of a first target threshold voltage and detecting, from among the plurality of first memory cells, a first slow memory cell whose threshold voltage is less than the first verifying voltage, a second programming loop including applying a first program pulse to the first memory cells and applying a second program pulse to the first slow memory cell, a voltage level of the second program pulse of the second program loop being greater than a voltage level of the first program pulse of the second program loop, and a third programming loop.