公开(公告)号：US08906761B2

公开(公告)日：2014-12-09

申请号：US13798700

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinhye Kim ,  Sangho Rha ,  Jeong-Kyu Lee ,  Zulkarnain ,  Kyungseok Oh ,  Sangbom Kang ,  Seungjae Lee ,  Jungchan Lee

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.

Abstract translation: 使用可膨胀材料制造半导体器件。 该方法包括在衬底上形成第一栅极绝缘层，在第一栅极绝缘层上形成第一和第二栅极结构，第一和第二栅极结构彼此间隔一定距离，在侧壁和上部形成可膨胀材料 第一和第二栅极结构的表面，在第一和第二栅极结构之间的可膨胀材料上形成间隙填充层，并且执行热处理工艺以增加可膨胀材料的体积。

公开(公告)号：US20140073125A1

公开(公告)日：2014-03-13

申请号：US13798700

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shinhye Kim ,  Sangho Rha ,  Jeong-Kyu Lee ,  Zulkarnain ,  Kyungseok Oh ,  Sangbom Kang ,  Seungjae Lee ,  Jungchan Lee

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.

Abstract translation: 使用可膨胀材料制造半导体器件。 该方法包括在衬底上形成第一栅极绝缘层，在第一栅极绝缘层上形成第一和第二栅极结构，第一和第二栅极结构彼此间隔一定距离，在侧壁和上部形成可膨胀材料 第一和第二栅极结构的表面，在第一和第二栅极结构之间的可膨胀材料上形成间隙填充层，并且执行热处理工艺以增加可膨胀材料的体积。