Abstract:
A method of processing an audio signal is provided. The method includes receiving at least one digital audio stream from at least one audio source, applying at least one gain value to each of the at least one digital audio stream by a gain adjustment unit, mixing the at least one digital audio stream to which the at least one gain value has been applied, calculating a representative gain value from the at least one gain value, calculating an extra valid headroom based on the representative gain value for correction of the mixed at least one digital audio stream, and post-processing the mixed at least one digital audio stream using the extra valid headroom.
Abstract:
A method and an apparatus for customizing audio data processing are provided. The method includes receiving audio data through a wireless communication channel from an external device; decoding the received audio data; reducing noise of the decoded audio data; identifying hearing characteristics of a user by testing hearing abilities of the user at a plurality of frequency bands; adjusting a dynamic range of each of the plurality of frequency bands based on the hearing characteristics; processing the noise-reduced audio data based on the adjusted dynamic range of each of the plurality of frequency bands; and outputting the processed audio data.
Abstract:
A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.
Abstract:
A method of filling cavities in a semiconductor structure during fabrication. A layer of a first material, e.g., a polysilazane, is deposited on the semiconductor, and subjected to a first thermal process to change its chemical composition, e.g., to change it to silicon dioxide. It is then etched back, and the cycle of deposition, and thermal processing is repeated. The etch-back may also be repeated in one or more of the cycles after the first cycle, and a second thermal process, that may increase the density of one or more of the deposited layers, may be performed in one or more of the cycles.
Abstract:
A method and apparatus for customizing audio signal processing for a user by a mobile device is provided. The method includes identifying hearing characteristics of the user by testing hearing abilities of the user, by the mobile device, at a plurality of frequencies; adjusting a dynamic range of each of the plurality of frequencies based on the hearing characteristics; processing a decoded audio signal based on the adjusted dynamic range of each of the plurality of frequencies; and outputting the processed audio signal.
Abstract:
A method of filling cavities in a semiconductor structure during fabrication. A layer of a first material, e.g., a polysilazane, is deposited on the semiconductor, and subjected to a first thermal process to change its chemical composition, e.g., to change it to silicon dioxide. It is then etched back, and the cycle of deposition, and thermal processing is repeated. The etch-back may also be repeated in one or more of the cycles after the first cycle, and a second thermal process, that may increase the density of one or more of the deposited layers, may be performed in one or more of the cycles.
Abstract:
A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.