公开(公告)号：US20240322043A1

公开(公告)日：2024-09-26

申请号：US18609539

申请日：2024-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WOOYEOL MAENG ,  CHANGKI BAEK ,  KANGWOOK PARK ,  HYANGWOO KIM ,  KYOUNGHWAN OH ,  HYUNGJIN LEE

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7856 ,  H01L29/408 ,  H01L29/4983 ,  H01L29/66803 ,  H01L29/7835

Abstract: An integrated circuit device includes a fin body, a source and a drain disposed on the fin body, a channel disposed in the fin body between the source and the drain, a drain extension region disposed in the fin body between the drain and the channel, a gate insulating film disposed on the channel and the drain extension region, a high-permittivity layer disposed on the gate insulating film over the drain extension region, and a double gate including a first gate disposed on the gate insulating film above the channel adjacent to the source and a second gate in contact with the first gate. A first work function of the first gate is greater than a second work function of the second gate.

公开(公告)号：US20150255123A1

公开(公告)日：2015-09-10

申请号：US14571634

申请日：2014-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： STEVE SUNHOM PAAK ,  KANGWOOK PARK ,  HEONJONG SHIN ,  SUNIL YU ,  JONGMIL YOUN ,  HYUNGSOON JANG

IPC: G11C5/06 ,  G11C5/02

CPC classification number: G11C5/06 ,  G11C5/02 ,  G11C5/025 ,  G11C8/14 ,  G11C29/1201 ,  G11C29/48 ,  G11C2029/5602

Abstract: A semiconductor device may include a semiconductor substrate; a test circuit array region; a pad region on the semiconductor substrate and at at least a first side of the test circuit array region and outside of the test circuit array region, transistors arranged in the test circuit array region in a first direction and a second direction perpendicular to the first direction, source lines spaced apart from each other in the second direction, each of the source lines extending in the first direction and electrically connected to corresponding source electrodes of the transistors, and drain lines spaced apart from each other in the second direction, each of the drain lines extending in the first direction and electrically connected to drain electrodes of the transistors.

Abstract translation: 半导体器件可以包括半导体衬底; 测试电路阵列区域; 半导体衬底上的焊盘区域和测试电路阵列区域的至少第一侧以及测试电路阵列区域的外部，在第一方向和垂直于第一方向的第二方向上布置在测试电路阵列区域中的晶体管 在第二方向上彼此间隔开的源极线，每个源极线在第一方向上延伸并且电连接到晶体管的相应源电极，以及在第二方向彼此间隔开的漏极线， 漏极线在第一方向上延伸并电连接到晶体管的漏电极。