公开(公告)号：US20210287959A1

公开(公告)日：2021-09-16

申请号：US17332574

申请日：2021-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUIN KIM ,  JIYONG KIM ,  SUNG-KI LEE

IPC: H01L23/367 ,  H05K5/02 ,  G11C5/04 ,  H01L23/02

Abstract: A semiconductor device includes a first case part, a second case part coupled to the first case part to provide a case, a semiconductor module disposed within the case closer to the second case part than to the first case part, and a plate interposed between the first case part and the semiconductor module. The plate is a thermal conductor, i.e., is of material having thermal conductivity, to transfer heat generated by the semiconductor module to the case where the heat can dissipate to the outside of the semiconductor device.

公开(公告)号：US20230411238A1

公开(公告)日：2023-12-21

申请号：US18089615

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： ILHAN YUN ,  SUNG-KI LEE ,  HYEKYOUNG LEE

IPC: H01L23/373 ,  H05K7/20

CPC classification number: H01L23/3735 ,  H05K7/20436 ,  H05K7/20509 ,  H10B80/00

Abstract: A solid state drive (SSD) includes a case including a planar portion, a protrusion portion protruding from the planar portion, and a plurality of fins protruding from the planar portion and defining an internal space, a printed circuit board located within the internal space of the case and including a semiconductor device and a controller, and a heat dissipation sheet covering the planar portion and the protrusion portion of the case. The plurality of fins are spaced apart from the protrusion portion and the printed circuit board in a first direction, an upper surface of the semiconductor device and an upper surface of the controller are in direct contact with the heat dissipation sheet, and the heat dissipation sheet includes at least one of graphite, graphene, carbon nanotubes, and fullerene.

公开(公告)号：US20200168443A1

公开(公告)日：2020-05-28

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEJIN OH ,  KYOHYEOK KIM ,  JONGWOO SUN ,  DOUGYONG SUNG ,  SUNG-KI LEE ,  JAEHYUN LEE

IPC: H01J37/32 ,  H01J37/22 ,  G01N21/94 ,  H01L21/66 ,  H01L21/3065

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light

公开(公告)号：US20200157682A1

公开(公告)日：2020-05-21

申请号：US16509946

申请日：2019-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINKYU SUNG ,  SUNG-KI LEE ,  DOUGYONG SUNG ,  SANG-HO LEE ,  KANGMIN JEON

IPC: C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/683

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US20210345489A1

公开(公告)日：2021-11-04

申请号：US17225209

申请日：2021-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHUNGHYUN RYU ,  BYUNGOK KANG ,  SU-YONG AN ,  JONGWOO JANG ,  INSUB KWAK ,  TECK SU OH ,  GEURIM JUNG ,  SANG-HO PARK ,  SUNG-KI LEE

IPC: H05K1/18 ,  H01G9/08

Abstract: A capacitor module configured to be horizontally mounted on a PCB and including; a case including a first side surface, an opposing second side, a first electrode pad and a second electrode pad disposed at the first side surface, and a third electrode pad disposed at the second side surface, and an electrolytic capacitor including a dielectric extending in a first horizontal direction, a first electrode contacting the first electrode pad and a second electrode contacting the second electrode pad, wherein the first electrode pad is spaced apart from second electrode pad in a second horizontal direction.

公开(公告)号：US20210147982A1

公开(公告)日：2021-05-20

申请号：US17159244

申请日：2021-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINKYU SUNG ,  SUNG-KI LEE ,  DOUGYONG SUNG ,  SANG-HO LEE ,  KANGMIN JEON

IPC: C23C16/455 ,  H01L21/683 ,  H01J37/32 ,  C23C16/509

Abstract: A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.

公开(公告)号：US20200075453A1

公开(公告)日：2020-03-05

申请号：US16534057

申请日：2019-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUIN KIM ,  JIYONG KIM ,  SUNG-KI LEE

IPC: H01L23/367 ,  H01L23/02 ,  G11C5/04 ,  H05K5/02

Abstract: A semiconductor device includes a first case part, a second case part coupled to the first case part to provide a case, a semiconductor module disposed within the case closer to the second case part than to the first case part, and a plate interposed between the first case part and the semiconductor module. The plate is a thermal conductor, i.e., is of material having thermal conductivity, to transfer heat generated by the semiconductor module to the case where the heat can dissipate to the outside of the semiconductor device.