公开(公告)号：US10716755B2

公开(公告)日：2020-07-21

申请号：US16237913

申请日：2019-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom Pyon ,  Kichul Park ,  Inkwon Kim ,  Ki Hoon Jang ,  Byoungho Kwon ,  Sangkyun Kim ,  Boun Yoon

IPC: H01L27/112 ,  H01L23/535 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L21/768 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/02 ,  H01L23/538 ,  A61K9/06 ,  A61K45/06 ,  A61K9/00 ,  A61K31/197 ,  A61K47/10 ,  A61K47/12 ,  A61K47/20 ,  A61K47/32 ,  A61K47/44

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

公开(公告)号：US10741409B2

公开(公告)日：2020-08-11

申请号：US15722413

申请日：2017-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jung Kim ,  Ye Hwan Kim ,  Ki Hoon Jang ,  Byoung Ho Kwon ,  Bo Un Yoon

IPC: H01L21/321 ,  H01L21/762 ,  H01L21/02 ,  H01L21/3105

Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.

公开(公告)号：US10177160B2

公开(公告)日：2019-01-08

申请号：US15661280

申请日：2017-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbeom Pyon ,  Kichul Park ,  Inkwon Kim ,  Ki Hoon Jang ,  Byoungho Kwon ,  Sangkyun Kim ,  Boun Yoon

IPC: H01L21/00 ,  H01L23/528 ,  H01L27/112 ,  H01L23/535 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/768 ,  H01L21/02 ,  H01L23/538

Abstract: A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region and a cell array region. The peripheral structure is on the peripheral circuit region. The lower insulating layer covers the peripheral circuit region and the cell array region and has a protruding portion protruding from a flat portion. The stack is on the lower insulating layer and the cell array region, and includes upper conductive patterns and insulating patterns which are alternately and repeatedly stacked.

公开(公告)号：US20180130672A1

公开(公告)日：2018-05-10

申请号：US15722413

申请日：2017-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jung Kim ,  Ye Hwan Kim ,  Ki Hoon Jang ,  Byoung Ho Kwon ,  Bo Un Yoon

IPC: H01L21/321

CPC classification number: H01L21/32125 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/762 ,  H01L21/76224

Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.