-
公开(公告)号:US20240196623A1
公开(公告)日:2024-06-13
申请号:US18531922
申请日:2023-12-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yunseong LEE , Jinseong HEO , Kihong KIM , Dukhyun CHOE , Hyunjae LEE , Sanghyun JO
CPC classification number: H10B51/20 , H01L29/40111 , H01L29/516 , H01L29/6684 , H01L29/78391 , H10B53/20
Abstract: An electronic device may include a conductive material layer, a ferroelectric layer covering the conductive material layer, and an electrode covering the ferroelectric layer. The ferroelectric layer may include a compound represented by HfxAyOz, where 0≤x≤1, 0≤y≤1, and 2(x+y)
-
公开(公告)号:US20240012950A1
公开(公告)日:2024-01-11
申请号:US18219955
申请日:2023-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Bogyeong KANG , Kihong KIM , Junyoung PARK , Jinsub PARK , Jaekeun OH , Youngjae JANG
CPC classification number: G06F21/79 , G06F21/602 , H04L9/0819
Abstract: Provided is a system-on-chip including a host central processing unit (CPU) and a secure element, wherein the secure element includes a primary device configured to transmit encrypted data, an internal bus configured to transmit the encrypted data, a plurality of secondary devices configured to receive the encrypted data, and a secure CPU configured to manage access keys indicating authorization of the primary device for accessing the plurality of secondary devices, and the internal bus sets a secondary device to which the encrypted data is to be transmitted from among the plurality of secondary devices, based on the access key and transmits the encrypted data to a set secondary device by using an error detection tag.
-
公开(公告)号:US20210133064A1
公开(公告)日:2021-05-06
申请号:US16929419
申请日:2020-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jongseon SHIN , Kihong KIM
Abstract: An integrated circuit chip includes a plurality of function blocks; a mode controller configured to convert an input signal, received from an external device through an input/output pin, into an input pattern and test mode setting data which include a plurality of bits, and to output the test mode setting data and a mode switching enable signal when a secure pattern generated therein is the same as the input pattern; and a mode setting module configured to control the plurality of function blocks to operate in a test mode according to the mode setting data, in response to the test mode switching enable signal.
-
公开(公告)号:US20250133671A1
公开(公告)日:2025-04-24
申请号:US18894846
申请日:2024-09-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jangho KIM , Sanghyeon NA , Jaeneung LEE , Sangyoung LEE , Kihong KIM
Abstract: A display apparatus including a stand configured to support a display, the stand including a stand base configured to be supported on a support surface, the stand base including an inclined portion configured to be inclined at a predetermined angle with respect to the support surface when the stand base is supported on the support surface, and a stand neck configured to connect a rear surface of the display and the stand base to support the display on the stand, the stand neck including a reflective portion that is connected to the inclined portion so that the reflective portion is perpendicular to the inclined portion, wherein the reflective portion is configured to reflect the inclined portion.
-
5.
公开(公告)号:US20240162346A1
公开(公告)日:2024-05-16
申请号:US18495220
申请日:2023-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sanghyun JO , Jinseong HEO , Kihong KIM , Hyunjae LEE
CPC classification number: H01L29/78391 , H01L28/60 , H01L29/516 , H01L29/6684 , H10B12/31
Abstract: A field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. The gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. The gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
-
公开(公告)号:US20170373304A1
公开(公告)日:2017-12-28
申请号:US15584234
申请日:2017-05-02
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Samsung SDI Co., Ltd.
Inventor: Youngeal KIM , Wooyoung YANG , Kihong KIM , Hyorang KANG
Abstract: A lithium battery includes an anode, a cathode, and a protective film disposed on at least one of the anode and the cathode, in which the protective film includes a compound including: i) at least one element selected from a Group 13 element, a Group 14 element, a Group 15 element, and a first Group 16 element; and ii) a second Group 16 element, in which the first Group 16 element is different from the second Group 16 element.
-
-
-
-
-