公开(公告)号：US20240347424A1

公开(公告)日：2024-10-17

申请号：US18531235

申请日：2023-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongsik SHIN ,  Kyongbeom KOH ,  Eunkyung KO ,  Hyonwook RA ,  Dongsoo SEO ,  Jeongyeon SEO ,  Kwangyong YANG

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7851 ,  H01L29/78696

Abstract: A semiconductor device may include an active region extending in a first direction; a gate structure extending in a second direction on the active region; a source/drain region on the active region and disposed at least one side of the gate structure; a contact structure on the source/drain region; a device isolation layer surrounding the active region; an interlayer insulating layer on the device isolation layer, the gate structure, and the source/drain region; a vertical power structure penetrating through the device isolation and interlayer insulating layers and connected to the contact structure; a rear power structure electrically connected to the vertical power structure and surrounding an entirety of a lower surface and a portion of a side surface of the vertical power structure; a vertical insulating film between the vertical power structure and the rear power structure; and a rear insulating film covering a side of the rear power structure.