公开(公告)号：US20240363526A1

公开(公告)日：2024-10-31

申请号：US18421431

申请日：2024-01-24

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuhoon CHOI ,  Seungseok HA ,  Seowoo NAM

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L23/544 ,  H10B12/00 ,  H10B41/30 ,  H10B41/42 ,  H10B43/30 ,  H10B43/40

CPC分类号： H01L23/5226 ,  H01L23/5283 ,  H01L23/544 ,  H10B12/09 ,  H10B12/50 ,  H10B41/30 ,  H10B41/42 ,  H10B43/30 ,  H10B43/40 ,  H01L2223/54426

摘要： A semiconductor device according to some example embodiments may include: a substrate having a first region and a second region; a lower interlayer insulating layer on the first region and the second region of the substrate; an upper interlayer insulating layer on the lower interlayer insulating layer; a via structure penetrating through the upper interlayer insulating layer in the first region; a plurality of metal wirings extending in a first direction on the via structure and electrically connected to the via structure; trenches on a same level as that of the via structure and in the upper interlayer insulating layer, in the second region; and a dummy wiring layer having a curved structure along upper surfaces of the trenches, the upper interlayer insulating layer, and the lower interlayer insulating layer.