Semiconductor package and electronic device including same

    公开(公告)号:US11594262B2

    公开(公告)日:2023-02-28

    申请号:US17238734

    申请日:2021-04-23

    Abstract: Provided is a semiconductor package. The semiconductor package comprises a semiconductor chip on a substrate, a voltage measurement circuit configured to measure an external voltage to be input into the semiconductor chip and a thermoelectric module configured to convert heat released from the semiconductor chip into an auxiliary power, and configured to apply the auxiliary power to the semiconductor chip, the thermoelectric module being separated from the voltage measurement circuit, wherein the voltage measurement circuit is configured to control the thermoelectric module to apply the auxiliary power to the semiconductor chip in response to a change in the external voltage.

    STORAGE DEVICE, NON-VOLATILE MEMORY DEVICE, AND METHOD OF OPERATING THE NON-VOLATILE MEMORY DEVICE

    公开(公告)号:US20240071449A1

    公开(公告)日:2024-02-29

    申请号:US18322725

    申请日:2023-05-24

    CPC classification number: G11C7/24 G11C7/1087 G11C7/1096

    Abstract: A storage device, a non-volatile memory device, and a method of operating the non-volatile memory device are provided. The storage device includes a storage controller configured to send a command and program data including a pattern of one or more bits, a non-volatile memory device configured to receive the command and the program data, and a pattern monitoring circuit configured to monitor a pattern of the program data sent from the storage controller. The pattern monitoring circuit is configured to send an abnormal status check bit to the storage controller when the program data includes repeated patterns that are repeated a preset number of times or more, and the storage controller is configured to resend the program data to the non-volatile memory device in response to receiving the abnormal status check bit.

    Storage device, server device including the storage device and method of operating the storage device

    公开(公告)号:US11797219B2

    公开(公告)日:2023-10-24

    申请号:US17344018

    申请日:2021-06-10

    CPC classification number: G06F3/0655 G06F3/061 G06F3/0652 G06F3/0679

    Abstract: A storage device, a server device including the storage device and a method of operating the storage device are provided. The storage device includes a nonvolatile memory configured to store first control information related to a memory operation performed in a first temperature range and second control information related to a memory operation performed in a second temperature range different from the first temperature range, the first control information and the second control information being stored separately from each other, and a storage controller configured to receive a temperature sensed from a temperature sensor, determine a target temperature by processing the sensed temperature, select one of the first control information and the second control information based on the determined target temperature, and perform a memory operation on the nonvolatile memory using the selected control information.

    STORAGE DEVICE, SERVER DEVICE INCLUDING THE STORAGE DEVICE AND METHOD OF OPERATING THE STORAGE DEVICE

    公开(公告)号:US20220155994A1

    公开(公告)日:2022-05-19

    申请号:US17344018

    申请日:2021-06-10

    Abstract: A storage device, a server device including the storage device and a method of operating the storage device are provided. The storage device includes a nonvolatile memory configured to store first control information related to a memory operation performed in a first temperature range and second control information related to a memory operation performed in a second temperature range different from the first temperature range, the first control information and the second control information being stored separately from each other, and a storage controller configured to receive a temperature sensed from a temperature sensor, determine a target temperature by processing the sensed temperature, select one of the first control information and the second control information based on the determined target temperature, and perform a memory operation on the nonvolatile memory using the selected control information.

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