公开(公告)号：US10026809B1

公开(公告)日：2018-07-17

申请号：US15662248

申请日：2017-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： GeumJung Seong ,  JeongYun Lee ,  SeungSoo Hong ,  KyungSeok Min ,  SeungJu Park ,  Youngmook Oh ,  Bora Lim

IPC: H01L29/76 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/764 ,  H01L27/088 ,  H01L29/08 ,  H01L23/535

Abstract: Active patterns protrude from a substrate. The active patterns include a first active pattern, a second active pattern spaced apart from the first active pattern at a first distance, and a third active pattern spaced apart from the second active pattern at a second distance greater than the first distance. A gate spacer is disposed on sidewalls of a gate electrode running across the active patterns. Source/drain regions include a first to a third source/drain regions disposed on a region of one of the active patterns. The region of one of the active patterns is disposed adjacent to a side of the gate electrode. First and second protective insulation patterns are disposed on the substrate between the first and second active patterns below the first and second source/drain regions and between the second and third active patterns below the second and third source/drain regions, respectively.