公开(公告)号：US20220223732A1

公开(公告)日：2022-07-14

申请号：US17400218

申请日：2021-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Tae RYU ,  Sang Hoon UHM ,  Ki Seok LEE ,  Min Su LEE ,  Won Sok LEE ,  Min Hee CHO

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/24 ,  H01L27/108

Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

公开(公告)号：US20240371994A1

公开(公告)日：2024-11-07

申请号：US18775518

申请日：2024-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Tae RYU ,  Sang Hoon UHM ,  Ki Seok LEE ,  Min Su LEE ,  Won Sok LEE ,  Min Hee CHO

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/24 ,  H10B12/00

Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

公开(公告)号：US20170186074A1

公开(公告)日：2017-06-29

申请号：US15391181

申请日：2016-12-27

Applicant: Samsung Electronics Co., Ltd. ,  MasterCard International Inc

Inventor： Min Su LEE ,  Kyoung Ae LIM ,  Ye Kyung YOO ,  Yoo Lim BAEK ,  Chris O'MAHONY

IPC: G06Q30/06 ,  G06F3/0488 ,  G06F3/0482 ,  G06Q10/08

CPC classification number: G06Q30/0633 ,  F25D23/12 ,  F25D29/00 ,  F25D2400/361 ,  F25D2500/06 ,  G06F3/0482 ,  G06F3/04886 ,  G06Q10/0875 ,  G06Q20/08 ,  G06Q20/12 ,  G06Q20/18 ,  G06Q30/0601 ,  G06Q30/0641 ,  G07F9/023 ,  G07F9/105

Abstract: An item purchase system may include a user device configured to receive an item purchase request from a user and transmit the item purchase request, and the refrigerator configured to display the item purchase request in response to receiving the item purchase request and place an order for the item requested to be purchased according to an input by the user or another user.

公开(公告)号：US20240266148A1

公开(公告)日：2024-08-08

申请号：US18416990

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Su LEE ,  Yeon Tae KIM ,  Yon Joo KANG ,  Yi Hwan KIM ,  Won Ki LEE ,  Hyeon Jin JEON ,  Hyeong Un JEON

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32724 ,  H01J2237/3343

Abstract: A semiconductor manufacturing device comprising a support unit in a chamber. A showerhead disposed between first and second plasma regions. First and second gas supply units injecting first and second process gases, respectively, into the second plasma region through the showerhead. The showerhead includes plasma penetration portions passing a portion of the plasma generated in the first plasma region therethrough. First gas flow paths injecting the first process gas into a first zone of the showerhead. Second gas flow paths injecting the second process gas into a second zone of the showerhead that surrounds the first zone. First and second cavities connected to the first and second gas flow paths, respectively. The first and second cavities diffusing the first and second process gases, respectively. First and second gas spraying holes connected to the first and second cavities, respectively, and facing the second plasma region.

公开(公告)号：US20160291813A1

公开(公告)日：2016-10-06

申请号：US15086518

申请日：2016-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Eun LEE ,  Boo-Keun YOON ,  Mun Keun LEE ,  Min Su LEE

IPC: G06F3/0482 ,  G06F3/0481 ,  G06F3/0488 ,  G06F3/0484

CPC classification number: G06F3/0482 ,  G06F3/04817 ,  G06F3/04845 ,  G06F3/0488 ,  G06F3/04883

Abstract: A method of displaying an electronic device including a touch-sensitive display includes displaying a screen including a first image object disposed in an upper portion of the touch-sensitive display and a second image object disposed in a lower portion thereof; and displaying a hidden menu on at least a portion of the screen when a predetermined touch input is received via the touch-sensitive display, wherein the hidden menu may include the first image object.

Abstract translation: 显示包括触敏显示器的电子设备的方法包括：显示包括设置在所述触敏显示器的上部的第一图像对象和设置在所述触敏显示器的下部的第二图像对象的屏幕; 以及当经由所述触敏显示器接收到预定触摸输入时，在所述屏幕的至少一部分上显示隐藏菜单，其中所述隐藏菜单可以包括所述第一图像对象。