公开(公告)号：US09922879B2

公开(公告)日：2018-03-20

申请号：US15698751

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-hong Kim ,  Dong-su Yoo ,  Min-joo Lee ,  Moon-kyun Song ,  Soo-jung Choi

IPC: H01L21/30 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66 ,  H01L21/322 ,  H01L21/324 ,  H01L29/06 ,  H01L21/76 ,  H01L21/306 ,  H01L27/088 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

Abstract: An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.