公开(公告)号：US09859392B2

公开(公告)日：2018-01-02

申请号：US15269001

申请日：2016-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Weon-hong Kim

IPC: H01L29/49 ,  H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/4966 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L29/42356 ,  H01L29/51 ,  H01L29/785

Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

公开(公告)号：US09702041B2

公开(公告)日：2017-07-11

申请号：US15176684

申请日：2016-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GENITECH, INC.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/469 ,  C23C16/455 ,  H01L21/00 ,  C23C16/40 ,  H01L21/02 ,  C23C16/44 ,  C23C16/02 ,  H01L21/285

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

公开(公告)号：US20170033013A1

公开(公告)日：2017-02-02

申请号：US15152815

申请日：2016-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-hong Kim ,  Dong-su Yoo ,  Min-Joo Lee ,  Moon-Kyun Song ,  Soo-jung Choi

IPC: H01L21/8234 ,  H01L21/76 ,  H01L29/06 ,  H01L21/324 ,  H01L27/088 ,  H01L21/322 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/306 ,  H01L21/30

CPC classification number: H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

Abstract: An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.

Abstract translation: 集成电路器件可以包括覆盖鳍状有源区的顶表面和相对侧壁的栅极绝缘层，覆盖栅绝缘层的栅电极和沿翅片形有源区和 栅极绝缘层。 集成电路器件的制造方法可以包括：形成覆盖预备翅片状有源区域的下部的绝缘层，通过使初步的翅片状有源区域的上部退火而形成具有外表面的翅片状有源区域，其具有增加的平滑度 在氢气氛中形成翅片形有源区，形成覆盖鳍状有源区的外表面的氢原子层。 可以形成栅绝缘层和栅电极以覆盖鳍状有源区的顶表面和相对侧壁。

公开(公告)号：US10312341B2

公开(公告)日：2019-06-04

申请号：US15824083

申请日：2017-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin Lim ,  Gi-gwan Park ,  Weon-hong Kim

IPC: H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092 ,  H01L21/8238

Abstract: An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

公开(公告)号：US09029244B2

公开(公告)日：2015-05-12

申请号：US13624609

申请日：2012-09-21

Applicant: Samsung Electronics Co., Ltd. ,  Genitech, Inc.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/205 ,  C23C16/455 ,  H01L21/00 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract translation: 提供了一种通过改善气阀系统来防止发生死体积而制造使用具有改善吹扫效率的四通阀的半导体器件的装置和方法。 该装置包括反应室，处理基板以制造半导体器件; 第一处理气体供给管，其将第一处理气体供给到所述反应室中; 四通阀，具有第一入口，第二入口，第一出口和第二出口，并安装在第一处理气体供应管上，使得第一入口和第一出口连接到第一处理气体供应管; 连接到所述四通阀的第二入口的第二处理气体供给管，以供应第二处理气体; 连接到四通阀的第二出口的旁路; 和安装在旁路上的闸阀。

公开(公告)号：US09922879B2

公开(公告)日：2018-03-20

申请号：US15698751

申请日：2017-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-hong Kim ,  Dong-su Yoo ,  Min-joo Lee ,  Moon-kyun Song ,  Soo-jung Choi

IPC: H01L21/30 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66 ,  H01L21/322 ,  H01L21/324 ,  H01L29/06 ,  H01L21/76 ,  H01L21/306 ,  H01L27/088 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

Abstract: An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.

公开(公告)号：US09779996B2

公开(公告)日：2017-10-03

申请号：US15152815

申请日：2016-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Weon-hong Kim ,  Dong-su Yoo ,  Min-Joo Lee ,  Moon-Kyun Song ,  Soo-jung Choi

IPC: H01L21/30 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/76 ,  H01L29/06 ,  H01L21/324 ,  H01L21/322 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L27/088

CPC classification number: H01L21/823431 ,  H01L21/02057 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/28158 ,  H01L21/3003 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/3221 ,  H01L21/3247 ,  H01L21/76 ,  H01L21/823462 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7854

Abstract: An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region. A gate insulation layer and a gate electrode may be formed to cover a top surface and opposite sidewalls of the fin-shaped active region.

公开(公告)号：US09406502B2

公开(公告)日：2016-08-02

申请号：US14685697

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  GENITECH, INC.

Inventor： Seok-jun Won ,  Yong-min Yoo ,  Dae-youn Kim ,  Young-hoon Kim ,  Dae-jin Kwon ,  Weon-hong Kim

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/02 ,  H01L21/285

CPC classification number: C23C16/45544 ,  C23C16/0272 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4402 ,  C23C16/45561 ,  C23C16/45574 ,  H01L21/00 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/28562 ,  Y10T137/0318

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.