公开(公告)号：US20240336839A1

公开(公告)日：2024-10-10

申请号：US18508941

申请日：2023-11-14

Applicant: Samsung Electronics Co,. Ltd.

Inventor： GAYOUNG SONG ,  JUNG-MIN OH ,  TAE SOO KWON ,  JUN-EUN LEE ,  SANG WON BAE ,  Minjae SUNG ,  YOUN SUG YOO ,  WOOK CHANG

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76841

Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.

公开(公告)号：US20240318078A1

公开(公告)日：2024-09-26

申请号：US18586037

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon KANG ,  Sungmin KIM ,  Minjae SUNG ,  Gayoung SONG ,  Jungmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Cheol HAM ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

CPC classification number: C09K13/06 ,  H01L21/32134

Abstract: An etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.