公开(公告)号：US20170084719A1

公开(公告)日：2017-03-23

申请号：US15229930

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoung KIM ,  SANG WON BAE ,  Jae-Jik BAEK ,  Wonsang CHOI

IPC: H01L29/66 ,  C09K13/00 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/3205

CPC classification number: H01L29/66545 ,  C09K13/00 ,  H01L21/28017 ,  H01L21/28255 ,  H01L21/32055 ,  H01L21/32134 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7848

Abstract: The present disclosure relates to an etchant, a method of making an etchant, an etching method and a method of fabricating a semiconductor device using the same. The etching method includes supplying an etchant on an etch-target layer to etch the etch-target layer in a wet etch manner. The etchant contains a basic compound and a sugar alcohol, and the basic compound contains ammonium hydroxide or tetraalkyl ammonium hydroxide. In the etchant, the sugar alcohol has 0.1 to 10 parts by weight for every 100 parts by weight of the basic compound.

公开(公告)号：US20240336839A1

公开(公告)日：2024-10-10

申请号：US18508941

申请日：2023-11-14

Applicant: Samsung Electronics Co,. Ltd.

Inventor： GAYOUNG SONG ,  JUNG-MIN OH ,  TAE SOO KWON ,  JUN-EUN LEE ,  SANG WON BAE ,  Minjae SUNG ,  YOUN SUG YOO ,  WOOK CHANG

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76841

Abstract: A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.

公开(公告)号：US20190136132A1

公开(公告)日：2019-05-09

申请号：US15973486

申请日：2018-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HOON HAN ,  SANG WON BAE ,  YOUNG TAEK HON ,  JAEWAN PARK ,  JINUK LEE ,  JUNGHUN LIM

IPC: C09K13/06 ,  H01L21/311

Abstract: A composition for etching may include phosphoric acid, an ammonium-based compound, at least one of hydrochloric acid or a polyphosphate-based compound, and a silicon-containing compound.