公开(公告)号：US20230051139A1

公开(公告)日：2023-02-16

申请号：US17934484

申请日：2022-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghyeon YEO ,  Heedong LEE ,  Minjun CHOI

IPC: G06F1/16 ,  H05K1/11 ,  H05K1/18 ,  H05K1/05 ,  H05K1/09

Abstract: An electronic device may include a display module, a connecting member including a bending portion connected to a display panel of the display module and extending toward a rear surface of the display module, and a protective layer formed of an insulating material to cover the bending portion, a printed circuit board disposed on a rear surface of the display module and connected to the display module by the connecting member, a frame disposed to surround at least a portion of the display module and formed of a conductive material, a side member including a first partition wall portion disposed between the frame and the display module to be spaced apart from the frame and a second partition wall portion disposed to be spaced apart from the display module and coveting at least a portion of an outer periphery of the display module.

公开(公告)号：US20240243153A1

公开(公告)日：2024-07-18

申请号：US18405372

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Jihyun KWAK ,  Hyoeun KIM ,  Surim LEE

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L27/14634 ,  H01L23/5223 ,  H01L24/08 ,  H01L24/80 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An image sensor is provided. The image sensor includes a first semiconductor chip including a first semiconductor substrate having a pixel unit, a first wiring structure having a first wiring layer, and a first bonding pad; a second semiconductor chip including a second semiconductor substrate having first and second surfaces, a second wiring structure on the first surface, contacting the first wiring structure, and having a second wiring layer, a second upper bonding pad bonded to the first bonding pad, and a via structure connected to the second wiring layer and extending to the second surface; a bonding layer including a bonding insulating layer on the second surface, and a second lower bonding pad connected to the via structure; and a third semiconductor chip including a third semiconductor substrate, a third wiring structure contacting the bonding insulating layer, and a third bonding pad bonded to the second lower bonding pad.

公开(公告)号：US20230122582A1

公开(公告)日：2023-04-20

申请号：US18046526

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N5/378 ,  H01L27/30 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.