公开(公告)号：US12028628B2

公开(公告)日：2024-07-02

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong Jung ,  Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/772

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/772

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US12185004B2

公开(公告)日：2024-12-31

申请号：US18046526

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US11924570B2

公开(公告)日：2024-03-05

申请号：US17482563

申请日：2021-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunyong Jung ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/771 ,  H04N25/53 ,  H04N25/75

CPC classification number: H04N25/771 ,  H04N25/53 ,  H04N25/75

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

公开(公告)号：US12143740B2

公开(公告)日：2024-11-12

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N25/75 ,  H03M1/12 ,  H04N25/671 ,  H04N25/77

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

公开(公告)号：US20230156363A1

公开(公告)日：2023-05-18

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H04N5/3745 ,  H04N5/3651

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

公开(公告)号：US20230122582A1

公开(公告)日：2023-04-20

申请号：US18046526

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N5/378 ,  H01L27/30 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.