公开(公告)号：US12185004B2

公开(公告)日：2024-12-31

申请号：US18046526

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US12249610B2

公开(公告)日：2025-03-11

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146 ,  H04N25/53 ,  H04N25/77

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

公开(公告)号：US20230122582A1

公开(公告)日：2023-04-20

申请号：US18046526

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun CHOI ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N5/378 ,  H01L27/30 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US12284838B2

公开(公告)日：2025-04-22

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146 ,  H10F39/00 ,  H10F39/12 ,  H10F39/18 ,  H04N25/53 ,  H04N25/77

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

公开(公告)号：US20220231060A1

公开(公告)日：2022-07-21

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.