公开(公告)号：US11303835B2

公开(公告)日：2022-04-12

申请号：US16996264

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myunglae Chu ,  Sungyong Kim ,  Seoksan Kim ,  Minwoong Seo ,  Jaekyu Lee ,  Jongyeon Lee ,  Junan Lee

IPC: H04N5/3745 ,  H04N5/378

Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

公开(公告)号：US12028628B2

公开(公告)日：2024-07-02

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong Jung ,  Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/59 ,  H01L27/146 ,  H04N25/772

CPC classification number: H04N25/59 ,  H01L27/14612 ,  H01L27/14643 ,  H04N25/772

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US11425320B2

公开(公告)日：2022-08-23

申请号：US16741234

申请日：2020-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae Chu ,  Minwoong Seo

IPC: H04N5/355 ,  H04N5/3745 ,  H04N5/369

Abstract: The complementary metal oxide (CMOS) image sensor CIS includes a plurality of pixels arranged in a two-dimensional (2D) array and each including a photodiode, a plurality of analog-to-digital converters (ADCs) configured to perform auto exposure in units of the pixels, and a readout circuit configured to read pixel signals of the pixels, in rows. The plurality of pixels and the plurality of ADCs are the same in number and are connected in a one-to-one correspondence to each other. Each of the plurality of ADCs performs AE on a corresponding one of the pixels.

公开(公告)号：US12185004B2

公开(公告)日：2024-12-31

申请号：US18046526

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minjun Choi ,  Myunglae Chu ,  Seoksan Kim ,  Minwoong Seo ,  Jiyoun Song ,  Hyunyong Jung

IPC: H04N25/75 ,  H04N25/766 ,  H04N25/772 ,  H10K39/32

Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

公开(公告)号：US11924570B2

公开(公告)日：2024-03-05

申请号：US17482563

申请日：2021-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunyong Jung ,  Minwoong Seo ,  Myunglae Chu

IPC: H04N25/771 ,  H04N25/53 ,  H04N25/75

CPC classification number: H04N25/771 ,  H04N25/53 ,  H04N25/75

Abstract: An image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.

公开(公告)号：US11457165B2

公开(公告)日：2022-09-27

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae Chu ,  Gwideok Ryan Lee ,  Taeyon Lee ,  Jaehoon Jeon

IPC: H04N5/225 ,  H04N5/232 ,  H04N5/369 ,  H04N5/335 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.

公开(公告)号：US11134213B2

公开(公告)日：2021-09-28

申请号：US16801288

申请日：2020-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae Chu ,  Minwoong Seo ,  Jungchak Ahn ,  Taeyon Lee

IPC: H04N5/378 ,  H04N5/374 ,  H04N5/335 ,  H04N5/355

Abstract: A pixel array includes a plurality of pixels. Each of the pixels includes a photoelectric element formed on a substrate and that generates charge from light, and a pixel circuit formed between the photoelectric element and the substrate and that outputs a digital signal value based on an amount of the generated charge. The pixel circuit includes a floating diffusion formed in the substrate and that stores the charge therein, a vertical pixel electrode that connects the floating diffusion to the photoelectric element and extends in a direction perpendicular to the substrate, an analog-to-digital converter that converts an electric potential of the floating diffusion into the digital signal value, and a memory element that stores the digital signal value.

公开(公告)号：US12143740B2

公开(公告)日：2024-11-12

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N25/75 ,  H03M1/12 ,  H04N25/671 ,  H04N25/77

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.

公开(公告)号：US11756968B2

公开(公告)日：2023-09-12

申请号：US16882597

申请日：2020-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan Kim ,  Minwoong Seo ,  Myunglae Chu ,  Jong-Yeon Lee ,  Min-Jun Choi

IPC: H01L27/14 ,  H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.

公开(公告)号：US20230156363A1

公开(公告)日：2023-05-18

申请号：US17989764

申请日：2022-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Hyunyong Jung ,  Myunglae Chu

IPC: H04N5/378 ,  H04N5/3745

CPC classification number: H04N5/378 ,  H04N5/3745 ,  H04N5/3651

Abstract: An image sensing device including a pixel array including a plurality of pixels and an analog-to-digital converter (ADC) configured to convert an analog signal into a digital signal is provided. The ADC includes a first circuit configured to receive the analog signal from a selected pixel among the plurality of pixels and generate a first output signal and a second circuit including a select transistor configured to apply a voltage to a floating node electrically connected to the select transistor based on the first output signal. The second circuit further includes a capacitor connected in parallel between a gate and a drain of the select transistor and an output circuit connected to the floating node and configured to output the digital signal based on the applied voltage to the floating node.