公开(公告)号：US20240048866A1

公开(公告)日：2024-02-08

申请号：US18482233

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munhwan KIM ,  Youngsun OH ,  Jongyoon SHIN ,  Honghyun JEON ,  Hana CHOI

IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/79 ,  H04N25/778

CPC classification number: H04N25/766 ,  H01L27/14645 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14627 ,  H04N25/11 ,  H04N25/75 ,  H04N25/79 ,  H04N25/778

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

公开(公告)号：US20210136303A1

公开(公告)日：2021-05-06

申请号：US17019954

申请日：2020-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Munhwan KIM ,  Jooyeong GONG ,  Youngsun OH ,  Yujung CHOI ,  Hana CHOI

IPC: H04N5/374 ,  H04N9/04 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.

公开(公告)号：US20240347563A1

公开(公告)日：2024-10-17

申请号：US18386871

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junoh KIM ,  Munhwan KIM ,  Hyeonseop Yoo

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603

Abstract: An image sensor includes a substrate, a polysilicon-vertical gate, a photoelectric conversion element, a channel, and a floating diffusion region. The substrate has a front surface and a back surface that opposes the front surface. The polysilicon-vertical gate is disposed in an upper region adjacent to the front surface of the substrate and extends into the substrate. The photoelectric conversion element is disposed at a lower position within the substrate with respect to the polysilicon-vertical gate. The channel is disposed adjacent to the polysilicon-vertical gate and doped with dopants of a same conductivity type as the photoelectric conversion element. The floating diffusion region is disposed in the upper region of the substrate and adjacent to the polysilicon-vertical gate in a first parallel direction that is parallel to the front surface of the substrate. The polysilicon-vertical gate, the photoelectric conversion element, and the floating diffusion region constitute a junctionless transfer transistor.