公开(公告)号：US20160027821A1

公开(公告)日：2016-01-28

申请号：US14675915

申请日：2015-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungchak AHN ,  Youngsun OH ,  Kyungho LEE ,  Dongyoung JANG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

Abstract: An image sensor includes a substrate including a pixel region and a peripheral circuit region, and a first device isolation layer disposed in the substrate to define a plurality of unit pixels that are adjacent to each other in a first direction in the pixel region. Each of the plurality of unit pixels includes at least one light sensing element disposed in the substrate. The image sensor includes an interlayer insulating structure on the substrate, and a first blocking structure disposed on the first device isolation layer and penetrating the interlayer insulating structure. The first blocking structure is disposed between the plurality of unit pixels when viewed from a plan view. The first blocking structure extends in a second direction intersecting the first direction when viewed from a plan view.

Abstract translation: 图像传感器包括：基板，包括像素区域和外围电路区域;以及第一器件隔离层，设置在所述基板中，以限定像素区域中沿着第一方向彼此相邻的多个单位像素。 多个单位像素中的每一个包括设置在基板中的至少一个感光元件。 图像传感器包括在基板上的层间绝缘结构，以及设置在第一器件隔离层上并穿透层间绝缘结构的第一阻挡结构。 当从平面图观察时，第一阻挡结构设置在多个单位像素之间。 当从俯视图观察时，第一阻挡结构沿与第一方向交叉的第二方向延伸。

公开(公告)号：US20240048866A1

公开(公告)日：2024-02-08

申请号：US18482233

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munhwan KIM ,  Youngsun OH ,  Jongyoon SHIN ,  Honghyun JEON ,  Hana CHOI

IPC: H04N25/766 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75 ,  H04N25/79 ,  H04N25/778

CPC classification number: H04N25/766 ,  H01L27/14645 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14627 ,  H04N25/11 ,  H04N25/75 ,  H04N25/79 ,  H04N25/778

Abstract: An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

公开(公告)号：US20220272289A1

公开(公告)日：2022-08-25

申请号：US17674045

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsun OH ,  Hyungjin BAE ,  Moosup LIM

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

公开(公告)号：US20210136303A1

公开(公告)日：2021-05-06

申请号：US17019954

申请日：2020-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Munhwan KIM ,  Jooyeong GONG ,  Youngsun OH ,  Yujung CHOI ,  Hana CHOI

IPC: H04N5/374 ,  H04N9/04 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor may include a plurality of first pixels arranged on a substrate along a first axis and a second axis, the plurality of first pixels connected to a first output line, a plurality of second pixels arranged on the substrate along the first axis and the second axis, the plurality of second pixels being mirror-symmetric to the plurality of first pixels along the first axis, and the plurality of second pixels connected to the first output line, a plurality of first color filters, and a plurality of second color filters.