公开(公告)号：US09564343B2

公开(公告)日：2017-02-07

申请号：US14990353

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mongsup Lee ,  Yoonho Son ,  Sang-Jun Lee ,  Munkwon Kang ,  Kyunghyun Kim ,  Inseak Hwang

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/7682 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

Abstract: A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.

Abstract translation: 具有包含氧化物的绝缘层的衬底被加载到腔室中，并且通过将包括蚀刻源气体的处理气体注入到室中来去除绝缘层的至少一部分。 去除处理以多次重复第一周期和第二周期的脉冲类型执行。 蚀刻源气体在第一时段期间以第一流量供应，并且在第二时段期间以小于第一流量的第二流量供应。 在除去过程中，室内温度保持在100℃或更高。

公开(公告)号：US20160307773A1

公开(公告)日：2016-10-20

申请号：US14990353

申请日：2016-01-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mongsup Lee ,  Yoonho Son ,  Sang-Jun Lee ,  Munkwon Kang ,  Kyunghyun Kim ,  Inseak Hwang

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/7682 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

Abstract: A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a process gas including an etching source gas into the chamber. The removal process is performed in a pulse type in which a first period and a second period are repeated a plurality of times. The etching source gas is supplied at a first flow rate during the first period and is supplied at a second flow rate less than the first flow rate during the second period. A temperature of the inside of the chamber remains at 100° C. or more during the removal process.

Abstract translation: 具有包含氧化物的绝缘层的衬底被加载到腔室中，并且通过将包括蚀刻源气体的处理气体注入到室中来去除绝缘层的至少一部分。 去除处理以多次重复第一周期和第二周期的脉冲类型执行。 蚀刻源气体在第一时段期间以第一流量供应，并且在第二时段期间以小于第一流量的第二流量供应。 在除去过程中，室内温度保持在100℃或更高。