公开(公告)号：US10818727B2

公开(公告)日：2020-10-27

申请号：US16161370

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsu Son ,  Seung Pil Ko ,  Jung Hyuk Lee ,  Shinhee Han ,  Gwan-Hyeob Koh ,  Yoonjong Song

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L23/522

Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.

公开(公告)号：US11271038B2

公开(公告)日：2022-03-08

申请号：US17027980

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsu Son ,  Seung Pil Ko ,  Jung Hyuk Lee ,  Shinhee Han ,  Gwan-Hyeob Koh ,  Yoonjong Song

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L23/522

Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.