公开(公告)号：US10930649B2

公开(公告)日：2021-02-23

申请号：US16358118

申请日：2019-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US20220384432A1

公开(公告)日：2022-12-01

申请号：US17886530

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11444081B2

公开(公告)日：2022-09-13

申请号：US17150712

申请日：2021-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11923362B2

公开(公告)日：2024-03-05

申请号：US18314569

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11676964B2

公开(公告)日：2023-06-13

申请号：US17886530

申请日：2022-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-Won Kim ,  Jung-gil Yang

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/308

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US11742411B2

公开(公告)日：2023-08-29

申请号：US17224609

申请日：2021-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo Noh ,  Myung-gil Kang ,  Ho-jun Kim ,  Geum-jong Bae ,  Dong-il Bae

IPC: H01L21/02 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/02603 ,  H01L21/76224 ,  H01L21/76802 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42356 ,  H01L29/7846 ,  H01L29/7848

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

公开(公告)号：US10978299B2

公开(公告)日：2021-04-13

申请号：US16361914

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo Noh ,  Myung-gil Kang ,  Ho-jun Kim ,  Geum-jong Bae ,  Dong-il Bae

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

公开(公告)号：US20200083219A1

公开(公告)日：2020-03-12

申请号：US16358118

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.