公开(公告)号：US09899231B2

公开(公告)日：2018-02-20

申请号：US14996481

申请日：2016-01-15

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-hoon Kim ,  Nae-ry Yu ,  Boo-deuk Kim ,  Song-se Yi ,  Jung-sik Choi

IPC分类号： H01L21/308 ,  H01L21/311 ,  G03F7/40 ,  H01L21/02 ,  H01L21/033 ,  G03F7/11

CPC分类号： H01L21/31144 ,  G03F7/11 ,  G03F7/40 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0332

摘要： Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.