公开(公告)号：US20190198296A1

公开(公告)日：2019-06-27

申请号：US16104496

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： SIQING LU ,  YEONGKWANG LEE ,  KEESOO PARK ,  SEUNGJAE LEE ,  JINHYUK CHOI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32834 ,  H01J2237/3341 ,  H01L21/67011

Abstract: Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.