公开(公告)号：US20250063269A1

公开(公告)日：2025-02-20

申请号：US18937826

申请日：2024-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEYOUNG BAE ,  SUNYOOL KANG ,  HAESICK SUL ,  SUYONG KIM

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/709 ,  H04N25/71 ,  H04N25/77 ,  H04N25/79

Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

公开(公告)号：US20240319874A1

公开(公告)日：2024-09-26

申请号：US18610556

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUYONG KIM ,  ILHAN PARK

IPC: G06F3/06

CPC classification number: G06F3/0608 ,  G06F3/0656 ,  G06F3/0679

Abstract: A memory device includes a first memory cell array and a second memory cell array, a first page buffer and a second page buffer configured to read data from the first memory cell array and the second memory cell array, respectively; and a first compression circuit configured to compress first soft decision data into first compressed data by encoding a location of a bit having a first value among bits of the first soft decision data, the first soft decision data being obtained from the first memory cell array by using a plurality of soft read voltages, wherein the first compression circuit is further configured to compress the first soft decision data into the first compressed data while second hard decision data is being output, the second hard decision data being read from the second memory cell array by using a hard read voltage.

公开(公告)号：US20230217129A1

公开(公告)日：2023-07-06

申请号：US17823125

申请日：2022-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEYOUNG BAE ,  SUNYOOL KANG ,  HAESICK SUL ,  SUYONG KIM

IPC: H04N5/378 ,  H04N5/369 ,  H04N5/376 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/378 ,  H04N5/3698 ,  H04N5/3765 ,  H04N5/379 ,  H04N5/3745 ,  H01L27/14612 ,  H01L27/14621

Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.