公开(公告)号：US20250006789A1

公开(公告)日：2025-01-02

申请号：US18425857

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Kyung SHIN ,  Sang Min CHO ,  Jeong Yong CHOI ,  Dong Woo KANG ,  Hong Bae PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern including a lower pattern extending a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction, the plurality of sheet patterns including an uppermost sheet pattern, a plurality of gate structures disposed to be spaced apart from each other in the first direction on the active pattern and including gate electrodes extending in a third direction and gate spacers on sidewalls of the gate electrodes and a source/drain pattern disposed between the gate structures adjacent to each other and including a semiconductor liner film and a semiconductor filling film on the semiconductor liner film, wherein the semiconductor liner film covers a portion of an upper surface of an uppermost sheet pattern.

公开(公告)号：US20250063788A1

公开(公告)日：2025-02-20

申请号：US18431190

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min CHO ,  Hee Sub KIM ,  Bo Mi KIM ,  Chul Sung KIM ,  Geun Hee JEONG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: The semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.