公开(公告)号：US20170092547A1

公开(公告)日：2017-03-30

申请号：US15234170

申请日：2016-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Poren Tang ,  Sunjung Steve KIM ,  Moon Seung YANG ,  Seung Hun LEE ,  Hyun Jung LEE ,  Geun Hee JEONG

IPC: H01L21/8238 ,  H01L21/306 ,  H01L21/308 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/10 ,  H01L21/02 ,  H01L27/092

CPC classification number: H01L21/823892 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/823807 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/78

Abstract: Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.

公开(公告)号：US20250063788A1

公开(公告)日：2025-02-20

申请号：US18431190

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min CHO ,  Hee Sub KIM ,  Bo Mi KIM ,  Chul Sung KIM ,  Geun Hee JEONG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: The semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.