公开(公告)号：US20190252466A1

公开(公告)日：2019-08-15

申请号：US16110518

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun YOO ,  Eun Mi KIM ,  Joon KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Kyung Rae BYUN ,  Sang Hoon SONG

IPC: H01L27/30 ,  H01L27/28

CPC classification number: H01L27/307 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/286 ,  H01L31/02162 ,  H01L31/022466 ,  H01L51/42

Abstract: An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.

公开(公告)号：US20220059621A1

公开(公告)日：2022-02-24

申请号：US17520626

申请日：2021-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Ryan LEE ,  Jung Hun KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Sang Hoon UHM ,  Beom Suk LEE ,  Tae Yon LEE ,  Dong Mo IM

IPC: H01L27/30 ,  H01L27/28 ,  H01L51/44 ,  H01L51/42 ,  H01L27/146

Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

公开(公告)号：US20210343790A1

公开(公告)日：2021-11-04

申请号：US17373103

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Kwan Sik KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Man Geun CHO

IPC: H01L27/30 ,  H01L49/02 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US20200058707A1

公开(公告)日：2020-02-20

申请号：US16391616

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Kwan Sik KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Man Geun CHO

IPC: H01L27/30 ,  H04N5/378 ,  H01L49/02

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

公开(公告)号：US20200052041A1

公开(公告)日：2020-02-13

申请号：US16660799

申请日：2019-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Ryan LEE ,  Jung Hun KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Sang Hoon UHM ,  Beom Suk LEE ,  Tae Yon LEE ,  Dong Mo IM

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L27/28 ,  H01L27/146

Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

公开(公告)号：US20190386065A1

公开(公告)日：2019-12-19

申请号：US16555074

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun YOO ,  Eun Mi KIM ,  Joon KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Kyung Rae BYUN ,  Sang Hoon SONG

IPC: H01L27/30 ,  H01L51/42 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/0224 ,  H01L27/28

Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

公开(公告)号：US20190148457A1

公开(公告)日：2019-05-16

申请号：US16246431

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwi-Deok Ryan LEE ,  Jung Hun KIM ,  Chang Hwa KIM ,  Sang Su PARK ,  Sang Hoon UHM ,  Beom Suk LEE ,  Tae Yon LEE ,  Dong Mo IM

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/42 ,  H01L27/28

Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.