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公开(公告)号:US20190252466A1
公开(公告)日:2019-08-15
申请号:US16110518
申请日:2018-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong Hyun YOO , Eun Mi KIM , Joon KIM , Chang Hwa KIM , Sang Su PARK , Kyung Rae BYUN , Sang Hoon SONG
CPC classification number: H01L27/307 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14647 , H01L27/14685 , H01L27/14689 , H01L27/286 , H01L31/02162 , H01L31/022466 , H01L51/42
Abstract: An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.
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公开(公告)号:US20220059621A1
公开(公告)日:2022-02-24
申请号:US17520626
申请日:2021-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gwi-Deok Ryan LEE , Jung Hun KIM , Chang Hwa KIM , Sang Su PARK , Sang Hoon UHM , Beom Suk LEE , Tae Yon LEE , Dong Mo IM
IPC: H01L27/30 , H01L27/28 , H01L51/44 , H01L51/42 , H01L27/146
Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.
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公开(公告)号:US20210343790A1
公开(公告)日:2021-11-04
申请号:US17373103
申请日:2021-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Jun CHOI , Kwan Sik KIM , Chang Hwa KIM , Sang Su PARK , Man Geun CHO
IPC: H01L27/30 , H01L49/02 , H04N5/378 , H01L27/146
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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公开(公告)号:US20200058707A1
公开(公告)日:2020-02-20
申请号:US16391616
申请日:2019-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min Jun CHOI , Kwan Sik KIM , Chang Hwa KIM , Sang Su PARK , Man Geun CHO
Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.
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公开(公告)号:US20200052041A1
公开(公告)日:2020-02-13
申请号:US16660799
申请日:2019-10-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gwi-Deok Ryan LEE , Jung Hun KIM , Chang Hwa KIM , Sang Su PARK , Sang Hoon UHM , Beom Suk LEE , Tae Yon LEE , Dong Mo IM
IPC: H01L27/30 , H01L51/42 , H01L51/44 , H01L27/28 , H01L27/146
Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.
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公开(公告)号:US20190386065A1
公开(公告)日:2019-12-19
申请号:US16555074
申请日:2019-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jong Hyun YOO , Eun Mi KIM , Joon KIM , Chang Hwa KIM , Sang Su PARK , Kyung Rae BYUN , Sang Hoon SONG
IPC: H01L27/30 , H01L51/42 , H01L31/0216 , H01L27/146 , H01L31/0224 , H01L27/28
Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.
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公开(公告)号:US20190148457A1
公开(公告)日:2019-05-16
申请号:US16246431
申请日:2019-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gwi-Deok Ryan LEE , Jung Hun KIM , Chang Hwa KIM , Sang Su PARK , Sang Hoon UHM , Beom Suk LEE , Tae Yon LEE , Dong Mo IM
Abstract: A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.
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