IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20210343790A1

    公开(公告)日:2021-11-04

    申请号:US17373103

    申请日:2021-07-12

    Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20200058707A1

    公开(公告)日:2020-02-20

    申请号:US16391616

    申请日:2019-04-23

    Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a substrate including a first surface opposite a second surface that is incident to light, a first photoelectric conversion layer in the substrate, a wiring structure including a plurality of wiring layers on the first surface of the substrate, an interlayer insulating film on the second surface of the substrate, a capacitor structure in the interlayer insulating film, and a first wiring on the interlayer insulating film. The capacitor structure includes a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate. The second conductive pattern is connected to the first wiring.

    IMAGE SENSOR INCLUDING COLOR FILTERS SEPARATED BY TWO INSULATING LAYERS

    公开(公告)号:US20190386065A1

    公开(公告)日:2019-12-19

    申请号:US16555074

    申请日:2019-08-29

    Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

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