公开(公告)号：US20180217834A1

公开(公告)日：2018-08-02

申请号：US15658976

申请日：2017-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Uk Park ,  Bong Chun Kang ,  Cheong Woo Lee ,  Hee Dong Shin

IPC: G06F9/445 ,  G06F3/06 ,  G06F9/44

CPC classification number: G06F8/66 ,  G06F3/0619 ,  G06F3/065 ,  G06F3/0679 ,  G06F8/654 ,  G06F9/4401

Abstract: A semiconductor system comprises a nonvolatile memory storing a patch code, the patch code comprising a unique identifier (ID). An internal read only memory (IROM) stores a boot code, the boot code comprising a patch code execution function for executing the patch code and a linked register (LR) address for specifying a storage location where the patch code is to be executed. A static random access memory (SRAM) stores a copy of the patch code at the storage location, the copy of the patch code including the unique ID. A processor executes the copy of the patch code from the storage location. The processor executes the copy of the patch code stored at the storage location in the SRAM according to the comparison result.

公开(公告)号：US10459715B2

公开(公告)日：2019-10-29

申请号：US15658976

申请日：2017-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Uk Park ,  Bong Chun Kang ,  Cheong Woo Lee ,  Hee Dong Shin

IPC: G06F8/65 ,  G06F3/06 ,  G06F9/4401 ,  G06F8/654

Abstract: A semiconductor system comprises a nonvolatile memory storing a patch code, the patch code comprising a unique identifier (ID). An internal read only memory (IROM) stores a boot code, the boot code comprising a patch code execution function for executing the patch code and a linked register (LR) address for specifying a storage location where the patch code is to be executed. A static random access memory (SRAM) stores a copy of the patch code at the storage location, the copy of the patch code including the unique ID. A processor executes the copy of the patch code from the storage location. The processor executes the copy of the patch code stored at the storage location in the SRAM according to the comparison result.

公开(公告)号：US11829063B2

公开(公告)日：2023-11-28

申请号：US17501085

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Uk Park ,  Jong Ju Park ,  Jong Keun Oh

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective photomask includes a pattern area, a non-pattern area at least partially surrounding the pattern area, and a black border area interposed between the pattern area and the non-pattern area. The reflective photomask includes a mask substrate, a reflector layer stacked on the mask substrate, and an absorber layer stacked on the reflector layer. The black border area includes a plurality of first anneal patterns which are arranged along an edge of the pattern area and each have an island shape, and a second anneal pattern which fills inside of the black border area and has a line shape.