SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20240334678A1

    公开(公告)日:2024-10-03

    申请号:US18735313

    申请日:2024-06-06

    CPC classification number: H10B12/315 H10B12/34

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20230022373A1

    公开(公告)日:2023-01-26

    申请号:US17657202

    申请日:2022-03-30

    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

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