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    Photosensitive polymer and chemically amplified resist composition comprising the same
    1.
    发明申请
    Photosensitive polymer and chemically amplified resist composition comprising the same 审中-公开
    光敏聚合物和包含其的化学放大抗蚀剂组合物

    公开(公告)号：US20030215758A1

    公开(公告)日：2003-11-20

    申请号：US10409346

    申请日：2003-04-08

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hyun-Woo Kim ,  Sang-Gyun Woo ,  Myoung-Ho Jung

    IPC分类号： G03F007/038 ,  G03C001/492 ,  G03C001/494

    CPC分类号： G03F7/0395 ,  G03F7/0397

    摘要： A photosensitive polymer having hydrophobic and hydrophilic portions homogenously distributed therein and a resist composition comprising the photosensitive polymer. The photosensitive polymer having a formula: 1 wherein R1 and R2 are independently a hydrogen atom or a methyl group, R3 is an acid-labile C4nullC20 hydrocarbon group, R4 is a hydrophilic group, a/(anullbnullcnulldnulle)null0.01null0.6, b/(anullbnullcnulldnulle)null0.05null0.7, c/(anullbnullcnulldnulle)null0.01null0.6, d/(anullbnullcnulldnulle)null0.1null0.5, and e/(anullbnullcnulldnulle)null0.01null0.5.

    摘要翻译： 具有均匀分布在其中的疏水和亲水部分的光敏聚合物和包含光敏聚合物的抗蚀剂组合物。 具有下式的光敏聚合物：其中R1和R2独立地是氢原子或甲基，R3是酸不稳定的C4〜C20烃基，R4是亲水基团，a /（a + b + c + d + e）= 0.01〜0.6，b /（a + b + c + d + e）= 0.05〜0.7，c /（a + b + c + d + e）= 0.01〜0.6，d /（a + b + c + d + e）= 0.1〜0.5，e /（a + b + c + d + e）= 0.01〜0.5。

    Photosensitive polymers and resist compositions containing the same
    2.
    发明申请
    Photosensitive polymers and resist compositions containing the same 审中-公开
    含有它们的光敏聚合物和抗蚀剂组合物

    公开(公告)号：US20030224289A1

    公开(公告)日：2003-12-04

    申请号：US10417604

    申请日：2003-04-17

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sang-Jun Choi ,  Woo-Sung Han ,  Sang-Gyun Woo

    IPC分类号： G03F007/038

    CPC分类号： G03F7/0395 ,  C08F216/1416 ,  G03F7/0397

    摘要： A class of photosensitive polymers having special utility in a resist composition is disclosed, said polymers being prepared utilizing a vinyl oxy alkyl adamantane carboxylate monomer having a structural formula as shown below, the polymers having a weight average molecular weight in the range of about 3,000 to 50,000: 1 wherein x is an integer in the range of 2 to 6 inclusive. The photosensitive polymers of this invention include polymers having three or more monomer units and having the vinyl oxy alkyl adamantane carboxylate monomer polymerized with maleic acid anhydride and at least one monomer selected from the group consisting of a (meth)acrylate and norbornene derivative monomer.

    摘要翻译： 公开了一类在抗蚀剂组合物中具有特殊用途的光敏聚合物，所述聚合物使用具有如下结构式的乙烯基氧基烷基金刚烷羧酸酯单体制备，所述聚合物的重均分子量在约3,000至 50,000：其中x是2-6以下的整数。 本发明的光敏聚合物包括具有三个或更多个单体单元并且具有与马来酸酐聚合的乙烯基氧基烷基金刚烷羧酸酯单体的聚合物和至少一种选自（甲基）丙烯酸酯和降冰片烯衍生物单体的单体。

    Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same
    4.
    发明申请
    Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same 有权
    形成双层抗蚀剂膜的底层的方法和使用其制造半导体器件的方法

    公开(公告)号：US20040259024A1

    公开(公告)日：2004-12-23

    申请号：US10787368

    申请日：2004-02-26

    申请人： SAMSUNG ELECTRONICS CO., LTD

    发明人： Hyun-Woo Kim ,  Jin Hong ,  Myoung-Ho Jung ,  Sang-Gyun Woo

    IPC分类号： G03C001/76

    CPC分类号： G03F7/095 ,  G03F7/091

    摘要： A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.

    摘要翻译： 一种形成双层抗蚀剂的底层的方法，包括通过混合具有芳族基团的聚合物和甲基丙烯酸酯聚合物形成共混材料，并用共混材料涂覆基材。 涂布在基材上的混合材料被照射以形成底层。 具有芳基的聚合物可以是酚醛清漆聚合物或萘聚合物。