中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.018 seconds)

    DEVICE AND SYSTEM INCLUDING ADAPTIVE REPAIR CIRCUIT
    2.
    发明申请
    DEVICE AND SYSTEM INCLUDING ADAPTIVE REPAIR CIRCUIT 有权
    包括自适应维修电路的设备和系统

    公开(公告)号：US20150363258A1

    公开(公告)日：2015-12-17

    申请号：US14739534

    申请日：2015-06-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-Hoon SHIN ,  Hae-Suk LEE ,  Han-Vit JUNG ,  Kyo-Min SOHN

    IPC: G06F11/07

    CPC classification number: G06F11/0793 ,  G06F11/0703 ,  G06F11/0796 ,  G06F11/142 ,  G06F11/1423 ,  G06F11/1616 ,  G06F11/18 ,  G06F11/2002 ,  G06F11/2017

    Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.

    Abstract translation: 一种设备，系统和/或方法包括被配置为执行至少一个功能的内部电路，输入 - 输出端子组和修复电路。 输入输出端子组包括经由多个正常信号路径连接到外部设备的多个正常输入 - 输出端子和经由至少一个修复信号路径有选择地连接到外部设备的至少一个修复输入 - 输出端子。 修复电路基于模式信号和故障信息信号修复包括在正常信号路径中的至少一个故障信号路径，其中模式信号表示是否使用修复信号路径，并且故障信息信号表示正常信号的故障信息 路径。 使用维修电路，可以修复采用不同维修方案的各种系统，并且可以降低各种系统的设计和制造成本。

    MEMORY DEVICE SUPPORTING SKIP CALCULATION MODE AND METHOD OF OPERATING THE SAME
    3.
    发明申请
    MEMORY DEVICE SUPPORTING SKIP CALCULATION MODE AND METHOD OF OPERATING THE SAME 审中-公开

    公开(公告)号：US20190258487A1

    公开(公告)日：2019-08-22

    申请号：US16199679

    申请日：2018-11-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Sung SHIN ,  Sung-Ho PARK ,  Chan-Kyung KIM ,  Yong-Sik PARK ,  Sang-Hoon SHIN

    IPC: G06F9/355 ,  G06F9/345 ,  G06F9/30

    Abstract: A memory device includes a memory cell array formed in a semiconductor die, the memory cell array including a plurality of memory cells to store data and a calculation circuit formed in the semiconductor die. The calculation circuit performs calculations based on broadcast data and internal data and omits the calculations with respect to invalid data and performs the calculations with respect to valid data based on index data in a skip calculation mode, where the broadcast data are provided from outside the semiconductor die, the internal data are read from the memory cell array, and the index data indicates whether the internal data are the valid data or the invalid data. Power consumption is reduced by omitting the calculations and the read operation with respect to the invalid data through the skip calculation mode based on the index data.

Patent Agency Ranking