公开(公告)号：US20240268102A1

公开(公告)日：2024-08-08

申请号：US18471583

申请日：2023-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiseok LEE ,  Seung-Bo KO ,  Jongmin KIM ,  Hui-Jung KIM ,  SangJae PARK ,  Taejin PARK ,  Chan-Sic YOON ,  Myeong-Dong LEE ,  Hongjun LEE ,  Minju KANG ,  Keunnam KIM

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor device includes first and second active patterns extending in a first direction and arranged in a second direction intersecting the first direction, each of the first and second active patterns including first and second edge portions spaced apart from each other in the first direction, a first storage node pad and a first storage node contact sequentially provided on the first edge portion of the first active pattern, and a second storage node pad and a second storage node contact sequentially provided on the second edge portion of the second active pattern. Each of the first and second storage node contacts includes a metal material.

公开(公告)号：US20240268101A1

公开(公告)日：2024-08-08

申请号：US18471900

申请日：2023-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： SangJae PARK ,  Seung-Bo KO ,  Keunnam KIM ,  Jongmin KIM ,  Hui-Jung KIM ,  Taejin PARK ,  Chan-Sic YOON ,  Kiseok LEE ,  Myeong-Dong LEE ,  Hongjun LEE

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/05 ,  H10B12/34 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes first and second active patterns extending in a first direction and being adjacent to each other in a second direction, the first and second active patterns, each of which includes first and second edges spaced apart from each other in the first direction, a first storage node pad and a first storage node contact sequentially provided on the first edge of the first active pattern, a second storage node pad and a second storage node contact sequentially provided on the second edge of the second active pattern, and a fence pattern between the first and the second storage node contacts. Bottom and top surfaces of the first storage node contact are located at first and second levels, respectively. In a third direction, a width of the fence pattern at the first level is less than a width of the fence pattern at the second level.

公开(公告)号：US20210296431A1

公开(公告)日：2021-09-23

申请号：US17036731

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonyoung CHOI ,  SangJae PARK ,  Dongkyun LEE

IPC: H01L49/02

Abstract: An integrated circuit device including a lower electrode on a substrate, the lower electrode including a first lower electrode portion extending in a first direction perpendicular to a top surface of the substrate and including a first main region and a first top region, and a second lower electrode portion extending in the first direction on the first lower electrode portion and including a second main region and a second top region; a first top supporting pattern surrounding at least a portion of a side wall of the first top region of the first lower electrode portion; and a second top supporting pattern surrounding at least a portion of a side wall of the second top region of the second lower electrode portion, and the second lower electrode portion includes a protrusion protruding outward to the second top supporting pattern.