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    IMAGE SENSOR INCLUDING NANO-PHOTONIC MICROLENS ARRAY AND ELECTRONIC APPARATUS INCLUDING THE IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR INCLUDING NANO-PHOTONIC MICROLENS ARRAY AND ELECTRONIC APPARATUS INCLUDING THE IMAGE SENSOR 审中-公开

    公开(公告)号：US20240145509A1

    公开(公告)日：2024-05-02

    申请号：US18380914

    申请日：2023-10-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangeun MUN ,  Sookyoung Roh ,  Junho Lee

    IPC: H01L27/146 ,  G02B3/00

    CPC classification number: H01L27/14627 ,  G02B3/0006

    Abstract: An image sensor includes a sensor substrate including a plurality of pixels for sensing incident light, and a nano-photonic microlens array including a plurality of nano-photonic microlenses corresponding respectively to the plurality of pixels, wherein each of the plurality of nano-photonic microlenses includes a plurality of nano-structures that are arranged two-dimensionally to condense incident light onto corresponding pixels, and a gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses is greater than an arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses.

    META OPTICAL DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    3.
    发明申请
    META OPTICAL DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME 有权

    公开(公告)号：US20220082815A1

    公开(公告)日：2022-03-17

    申请号：US17174703

    申请日：2021-02-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangeun MUN ,  Hyeonsoo Park ,  Hyunsung Park ,  Seunghoon Han

    IPC: G02B26/06 ,  G02B1/00

    Abstract: A meta-optical device includes a plurality of phase modulation areas configured to modulate a phase of an incident light, each of the plurality of phase modulation areas including a plurality of nanostructures having a shape and an arrangement that are determined according to a respective rule set for each of the plurality of phase modulation areas; and a compensation area located between a kth phase modulation area and a (k+1)th phase modulation area adjacent to each other, from among the plurality of phase modulation areas, and including a compensation structure for buffering an effective refractive index change occurring in a boundary area between the kth phase modulation area and the (k+1)th phase modulation area according to respective rules of the kth phase modulation area and the (k+1)th phase modulation area, wherein N is a number of the plurality of phase modulation areas, k and N are natural numbers, and k is equal to or greater than 1 and less than N.

    IMAGE SENSOR HAVING NANO-PHOTONIC LENS ARRAY AND ELECTRONIC APPARATUS INCLUDING THE IMAGE SENSOR
    4.
    发明申请
    IMAGE SENSOR HAVING NANO-PHOTONIC LENS ARRAY AND ELECTRONIC APPARATUS INCLUDING THE IMAGE SENSOR 有权

    公开(公告)号：US20250048766A1

    公开(公告)日：2025-02-06

    申请号：US18674307

    申请日：2024-05-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Choonlae CHO ,  Hongkyu PARK ,  Jungho CHA ,  Sookyoung ROH ,  Sangeun MUN ,  Sungmo AHN

    IPC: H01L27/146

    Abstract: Provided is an image sensor including a sensor substrate including a plurality of pixels configured to sense light, and a nano-photonic lens array configured to separate incident light based on color and condense the separated incident light onto the plurality of pixels, wherein the nano-photonic lens array includes a plurality of supercells two-dimensionally disposed and including first unit patterns and second unit patterns, respectively including a plurality of pixel corresponding regions corresponding to the plurality of pixels, and wherein each of the plurality of pixel corresponding regions includes a plurality of nano-structures configured to separate the incident light based on color and condense the incident light onto the plurality of pixels, and wherein a cross-sectional size or a cross-sectional shape of a first nano-structure is different from a cross-sectional size or a cross-sectional shape of a second nano-structure.

    IMAGE SENSOR AND ELECTRONIC APPARATUS INCLUDING THE SAME
    5.
    发明公开
    IMAGE SENSOR AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240079430A1

    公开(公告)日：2024-03-07

    申请号：US18236122

    申请日：2023-08-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Choonlae CHO ,  Sangeun MUN ,  Sungmo AHN ,  Sookyoung ROH ,  Hyunsung PARK ,  Seokho YUN ,  Sangyun LEE ,  Junho LEE

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14645

    Abstract: An image sensor includes a sensor substrate includes first, second, and third pixels respectively sensing first, second and third wavelengths of light, A color separating lens array changes phase of light of the first, second, and third wavelengths, and condenses the phase-changed light onto the first, second and third pixels, respectively. The color separating lens array includes first to third pixel corresponding regions respectively facing the first to third pixels. The first pixel corresponding region includes a plurality of first nanoposts, the second pixel corresponding region includes a plurality of second nanoposts, and the third pixel corresponding region includes a plurality of third nanoposts, a second center nanopost having a greatest cross-sectional width among the second nanoposts overlaps a center of the second pixel, and a third center nanopost having a greatest cross-sectional width among the third nanoposts does not overlap a center of the third pixel.

    IMAGE SENSOR INCLUDING PATTERNED ANTIREFLECTION LAYER AND ELECTRONIC APPARATUS INCLUDING THE SAME
    6.
    发明公开
    IMAGE SENSOR INCLUDING PATTERNED ANTIREFLECTION LAYER AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240063241A1

    公开(公告)日：2024-02-22

    申请号：US18235547

    申请日：2023-08-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sangeun MUN ,  Sookyoung ROH ,  Sungmo AHN ,  Hyunsung PARK ,  Seokho YUN ,  Sangyun LEE ,  Junho LEE ,  Choonlae CHO

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14645

    Abstract: Provided are an image sensor including a patterned antireflection layer and an electronic apparatus including the image sensor. The image sensor includes a sensor substrate including a plurality of first pixels sensing light having a first wavelength and a plurality of second pixels sensing light having a second wavelength different from the first wavelength, a nano-photonic lens array including a plurality of nanostructures configured to condense an incident light onto the plurality of first pixels and the plurality of second pixels, and an antireflection layer disposed on a light incident surface of the nano-photonic lens array and including a plurality of holes arranged periodically and two-dimensionally, wherein the plurality of holes include a plurality of first holes arranged along a boundary between first and second pixels adjacent to each other and a plurality of second holes disposed to face an inner region of the first pixel or the second pixel.

    META OPTICAL DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
    7.
    发明公开
    META OPTICAL DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230341675A1

    公开(公告)日：2023-10-26

    申请号：US18343167

    申请日：2023-06-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD

    Inventor： Sangeun MUN ,  Hyeonsoo Park ,  Hyunsung Park ,  Seunghoon Han

    IPC: G02B26/06 ,  G02B1/00

    CPC classification number: G02B26/06 ,  G02B1/002 ,  G02B2207/101

    Abstract: A meta-optical device includes a plurality of phase modulation areas configured to modulate a phase of an incident light, each of the plurality of phase modulation areas including a plurality of nanostructures having a shape and an arrangement that are determined according to a respective rule set for each of the plurality of phase modulation areas; and a compensation area located between a kth phase modulation area and a (k+1)th phase modulation area adjacent to each other, from among the plurality of phase modulation areas, and including a compensation structure for buffering an effective refractive index change occurring in a boundary area between the kth phase modulation area and the (k+1)th phase modulation area according to respective rules of the kth phase modulation area and the (k+1)th phase modulation area, wherein N is a number of the plurality of phase modulation areas, k and N are natural numbers, and k is equal to or greater than 1 and less than N.

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