公开(公告)号：US20230207626A1

公开(公告)日：2023-06-29

申请号：US17874945

申请日：2022-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namkyu CHO ,  Sanggil LEE ,  Seokhoon KIM ,  Pankwi PARK

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/40

CPC classification number: H01L29/0847 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41775 ,  H01L29/78684 ,  H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/401 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source/drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source/drain patterns may include a buffer layer in contact with a corresponding one of the channel patterns and a main layer on the buffer layer. The main layer of each of the source/drain patterns may include first and second semiconductor layers, which may be sequentially stacked and contain germanium. A concentration of the germanium in the first semiconductor layer may be higher on the center region than on the edge region, and a concentration of the germanium in the second semiconductor layer may be lower on the center region than on the edge region.