公开(公告)号：US20210285444A1

公开(公告)日：2021-09-16

申请号：US17199267

申请日：2021-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghea CHO ,  Junghoon PARK ,  Jongcheun SEO ,  Namkyu CHO ,  Dohyun KIM ,  Junguk JUN

IPC: F04C15/00 ,  F04C2/02

Abstract: Provided is a scroll compressor with enhanced sealing structure of a back pressure chamber. The scroll compressor includes a housing, a fixed scroll fixed to inside of the housing and including a fixed wrap, an orbit scroll including an orbit wrap which forms a compression chamber together with the fixed wrap, a back pressure chamber formed at a frame supporting the orbit scroll, and accommodating refrigerant for pressurizing the orbit scroll to a direction of the fixed scroll, and a sealing ring arranged between the fixed scroll and the orbit scroll to prevent the refrigerant in the back pressure chamber from flowing in or out through a gap between the fixed scroll and the orbit scroll, wherein the sealing ring includes a cut portion cut for the sealing ring to be deformable in a circumferential direction.

公开(公告)号：US20230366401A1

公开(公告)日：2023-11-16

申请号：US18358408

申请日：2023-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanghee CHO ,  Sunghea CHO ,  Dohyun KIM ,  Jongcheun SEO ,  Junguk JUN ,  Namkyu CHO

IPC: F04C29/12 ,  F04C18/02

CPC classification number: F04C29/12 ,  F04C18/0215

Abstract: A scroll compressor is provided. The scroll compressor includes a fixed scroll having an outlet and multiple release holes, a release valve ring installed on the top surface of the fixed scroll and formed to open and close the multiple release holes, and a retainer ring installed on the release valve ring and formed to restrict the movement of the release valve ring. The release valve ring has a ring shape, and comprises a fixing part, multiple release valves, and at least one connection part. The retainer ring comprises a retainer fixing part, multiple retainers, and at least one retainer connection part connecting at least one of the multiple retainers to the retainer fixing part.

公开(公告)号：US20230207626A1

公开(公告)日：2023-06-29

申请号：US17874945

申请日：2022-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namkyu CHO ,  Sanggil LEE ,  Seokhoon KIM ,  Pankwi PARK

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/40

CPC classification number: H01L29/0847 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41775 ,  H01L29/78684 ,  H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/401 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source/drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source/drain patterns may include a buffer layer in contact with a corresponding one of the channel patterns and a main layer on the buffer layer. The main layer of each of the source/drain patterns may include first and second semiconductor layers, which may be sequentially stacked and contain germanium. A concentration of the germanium in the first semiconductor layer may be higher on the center region than on the edge region, and a concentration of the germanium in the second semiconductor layer may be lower on the center region than on the edge region.

公开(公告)号：US20230402510A1

公开(公告)日：2023-12-14

申请号：US18100872

申请日：2023-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namkyu CHO ,  Jungtaek Kim ,  Moon Seung Yang ,  Sumin Yu ,  Seojin Jeong ,  Seokhoon Kim ,  Pankwi Park

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and a source/drain pattern on a side surface of the channel pattern, the source/drain pattern including a first section between a first level and a second level that is higher than the first level, a first variation section between the second level and a third level that is higher than the second level, and a second section between the third level and a fourth level that is higher than the third level, where a rate of change in germanium concentration in the first variation section in a first direction is greater than a rate of change in germanium concentration in each of the first section and the second section in the first direction, and a germanium concentration at each of the first level and the second level is greater than 0 at % and equal to or less than 10 at %.

公开(公告)号：US20200340476A1

公开(公告)日：2020-10-29

申请号：US16861673

申请日：2020-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon PARK ,  Sunghea CHO ,  Jongcheun SEO ,  Namkyu CHO ,  Dohyun KIM ,  Junguk JUN

IPC: F04C18/02 ,  F04C29/12

Abstract: A scroll compressor includes a main body, a cover to divide the main body into a low pressure section and a high pressure section, a fixed scroll including a first discharge port, an orbiting scroll to rotate with respect to the fixed scroll and to form a compression chamber together with the fixed scroll, a discharge guide disposed between the fixed scroll and the cover and including a second discharge port connected to the first discharge port, and a back pressure actuator configured to form a back pressure chamber together with the discharge guide and to move in a direction toward the cover with respect to the discharge guide to selectively connect the second discharge port with the high pressure section. The fixed scroll includes a bypass flow path connecting the compression chamber and the second discharge port and a bypass valve to open or close the bypass flow path.

公开(公告)号：US20200158110A1

公开(公告)日：2020-05-21

申请号：US16689350

申请日：2019-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghea CHO ,  Eunsuk KIM ,  Junghoon PARK ,  Jongcheun SEO ,  Namkyu CHO

IPC: F04C18/02

Abstract: Disclosed are a compressor in which a suction guide is provided between a gas suction tube of a casing and an inlet of a compression unit. The compressor includes a compression unit comprising an inlet for sucking gas and configured to compress the sucked gas; and a casing configured to accommodate the compression unit; and a suction guide comprising a passage for guiding the gas from an outside of the casing to the inlet, wherein the compression unit includes a first surface extending from an edge of the inlet, the suction guide includes a second surface extending from an edge of a vent of the passage, and provided in an internal area of the casing to make the first surface and the second surface face each other, and an external end of the first surface and an internal end of the second surface or an internal end of the first surface and an external end of the second surface do not overlap along a direction of an axis of the compressor.

公开(公告)号：US20240079983A1

公开(公告)日：2024-03-07

申请号：US18236110

申请日：2023-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bumun JUNG ,  Heunggyun ROH ,  Taeho YOON ,  Sangmin LEE ,  Namhyoung KIM ,  Namkyu CHO

IPC: H02P23/14 ,  H02P3/22 ,  H02P6/24 ,  H02P6/28 ,  H02P27/06

CPC classification number: H02P23/14 ,  H02P3/22 ,  H02P6/24 ,  H02P6/28 ,  H02P27/06

Abstract: A control method for a home appliance including a motor that is driven by a driving current. The control method includes (a) receiving a stop signal to stop the motor, (b) based on receiving the stop signal, performing open brake control that stops supply of the driving current to the motor, (c) based on a motor phase current of the motor at a start of the open brake control, estimating an initial motor speed of the motor at the start of the open brake control, (d) based on the estimated initial motor speed, determining a start time point of short brake control that applies a torque in a reverse direction to a rotation direction of the motor, and (e) performing the short brake control at the determined start time point of the short brake control.

公开(公告)号：US20230326970A1

公开(公告)日：2023-10-12

申请号：US18050684

申请日：2022-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namkyu CHO ,  Seokhoon KIM ,  Jeongho YOO ,  Choeun LEE ,  Pankwi PARK ,  Dongsuk SHIN

IPC: H01L29/08 ,  H01L29/786 ,  H01L27/092 ,  H01L29/66 ,  H01L29/775 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417 ,  H01L21/8238

CPC classification number: H01L29/0847 ,  H01L29/78696 ,  H01L27/092 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/41783 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/0673

Abstract: A semiconductor device includes a substrate including a first active pattern, a first channel pattern on the first active pattern, the first channel pattern including first, second, and third semiconductor patterns spaced apart from one another and vertically stacked, a first source/drain pattern connected to the first to third semiconductor patterns, and a gate electrode on the first to third semiconductor patterns. The first source/drain pattern includes a first protrusion protruding toward the first semiconductor pattern, a second protrusion protruding toward the second semiconductor pattern, and a third protrusion protruding toward the third semiconductor pattern. A width of the second protrusion is greater than a width of the first protrusion. A width of the third protrusion is greater than the width of the second protrusion.

公开(公告)号：US20230215867A1

公开(公告)日：2023-07-06

申请号：US17966472

申请日：2022-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namkyu CHO ,  Seokhoon Kim ,  Sanggil Lee ,  Pankwi Park

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/02603 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate including a first region, a second region, and active regions extending in a first direction in the first region and in the second region; gate electrodes on the first region and the second region, the gate electrodes intersecting the active regions and extending in a second direction; a plurality of channel layers spaced apart from each other in a third direction on active regions of the active regions and encompassed by the gate electrodes, the third direction being perpendicular to an upper surface of the substrate; and first source/drain regions and second source/drain regions in portions of the active regions that are recessed on both sides of the gate electrodes, the first source/drain regions and the second source/drain regions being connected to the plurality of channel layers, wherein the first source/drain regions are in the first region, and the second source/drain regions are in the second region, wherein an end portion of each of the first source/drain regions in the second direction in a plan view includes a tip region protruding in the second direction, and wherein an end portion of each of the second source/drain regions in the second direction in the plan view extends flatly in the first direction.